Devine: Structure Imperfections in Amorphous

1. Auflage 2000
ISBN: 978-0-471-97536-6
Verlag: Wiley John + Sons

Buch, Englisch, 506 Seiten, Format (B × H): 159 mm x 235 mm, Gewicht: 800 g

Siliciumdioxid ist eine der häufigsten Verbindungen der Erdkruste und gleichzeitig von immenser technologischer Bedeutung. Die Anwendungsgebiete des Siliciums reichen von der Glasfaserkommunikation über die Mikroelektronik und Halbleiterfertigung bis zur Deponie von Atommüll. Dieses in sich geschlossene Handbuch der Silicium-Technologie behandelt amorphe und kristalline Phasen, wobei der Schwerpunkt auf Strukturen und Strukturdefekten liegt. (02/00)

Autoren/Hrsg.

Devine, R. A. B.

Duraud, J.-P.

Dooryhée, E.

Fachgebiete

• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Schwermetalle und Chemikalien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Werkstoffkunde, Materialwissenschaft: Forschungsmethoden
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe

Inhaltsverzeichnis

Contributors

Preface

Part I Topological Models for the Crystalline and Amorphous Phases

(a) Description of the Atomic Arrangement in SiO_2 Polymorphs

Chapter 1 The Topology of Silica Networks (by L. W. Hobbs, C. E. Jesurum and B. Berger)

Chapter 2 Low-Pressure Crystalline Phases of SiO_2 (by G. Dolino)

Chapter 3 Theoretical Investigations of the Structure of Amorphous SiO_2 at Elevated Pressure (by L. Stixrude)

(b) Experimental Analysis of SiO_2 Atomic Networks

Chapter 4 Nuclear Magnetic Resonance as a Structural Probe of SiO_2 (by R. Dupree)

Chapter 5 Neutron and X-Ray Scattering Studies of Vitreous Silica (by A. C. Wright and R. N. Sinclair)

Part II Electronic Structure of the Si-O_2 Bond and the Extended Network

(a) Calculations and Modelling of the Electronic Structure

Chapter 6 Molecules as a Basis for Modeling the Force Field of Silica (by G. V. Gibbs, F. C. Hill, M. B. Boisen, Jr, and R. T. Downs)

Chapter 7 First Principles Calculation of the Electronic Structures of Crystalline and Amorphous Forms of SiO_2 (by W. Y. Ching)

Chapter 8 The Electronic Structure of Silica Using Ab Initio Pseudopotentials (by J. R. Chelikowsky and N. Binggeli)

(b) Experimental Analysis of the Electronic Structure

Chapter 9 X-Ray Absorption Near Edge Structures of SiO_2 (by F. Jollet)

Chapter 10 Electron Energy Loss Structures of SiO_2 (by M. Gautier-Soyer)

Part III Macroscopic and Point Defects

Chapter 11 Theory of Electronic and Structural Properties of Point Defects in SiO_2 (by A. H. Edwards, W. B. Fowler and J. Robertson)

Chapter 12 Radiation-Induced Defects and Electronic Modification (by P. Paillet, J. L. Leray and H. J. von Bardeleben)

Chapter 13 Transient Defects and Electronic Excitation (by N. Itoh, A. M. Stoneham and K. Tanimura)

Chapter 14 Radiation-Induced Defects and Structural Modifications (by E. Dooryhée, J.-P. Duraud and R. A. B. Devine)

Part IV Processing and Applications of Crystalline and Amorphous Phases

Chapter 15 Quartz Oscillators (by J. R. Vig)

Chapter 16 Science and Technology of Silica Lightguides for Telecommunications (by C. R. Kurkjian and D. M. Krol)

Chapter 17 Microstructure, Surface Chemistry, and Properties of Silica Gels (by C. J. Brinker, W. L. Warren and S. Wallace)

Index