Lucovsky / Pantelides / Galeener The Physics of MOS Insulators

Proceedings of the International Topical Conference on the Physics of MOS Insulators Held at the Jane S. McKimmon Conference Center, North Carolina State University, Raleigh, North Carolina, June 18-20, 1980
1. Auflage 2013
ISBN: 978-1-4831-6244-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 382 Seiten, Web PDF

The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover different topics, generally, they present how MOS insulators have captured the interest of biochemists and other individuals who are interested in this discipline. The papers generally include samples and measurements, observations, discussions, numerical representations, methodologies, conclusions, and recommendations. This book is a dependable source of information for those who are keen enough to study the physics of MOS insulators. This text is highly recommended to biochemists, students, and scholars who find this area of study interesting.

Autoren/Hrsg.

Lucovsky, Gerald

Pantelides, Sokrates T.

Galeener, Frank L.

Inhaltsverzeichnis

1;Front Cover;1
2;The Physics of Mos Insulators;4
3;Copyright Page;5
4;Table of Contents;8
5;FOREWORD;6
6;PART I: TRANSPORT PROPERTIES;14
6.1;CHAPTER 1.
HIGH CURRENT INJECTION INTO Si02 USING Si-RICH Si02 FILMSAND EXPERIMENTAL APPLICATIONS;14
6.1.1;ABSTRACT;14
6.1.2;I. INTRODUCTION;15
6.1.3;II. PHYSICS AND MATERIAL CONSIDERATIONS;17
6.1.4;III.
EXPERIMENTAL APPLICATIONS;23
6.1.5;IV. CONCLUSIONS;29
6.1.6;ACKNOWLEDGEMENTS;30
6.1.7;REFERENCES;30
6.2;CHAPTER 2.
HIGH FIELD CONDUCTION IN THICK OXIDE MNOS CAPACITORS ONP-TYPE SILICON;32
6.2.1;ABSTRACT;32
6.2.2;INTRODUCTION;32
6.2.3;SAMPLES AND MEASUREMENTS;32
6.2.4;OBSERVATIONS IN THE INVERSION MODE;32
6.2.5;OBSERVATIONS IN THE ACCUMULATION MODE;35
6.2.6;REFERENCES;36
6.3;CHAPTER 3.
DIELECTRIC BREAKDOWN IN THERMAL Si02 GROWN FROM DOPEDPOLY CRYSTALLINE SILICON THIN FILMS;37
6.3.1;INTRODUCTION;37
6.3.2;SAMPLE PREPARATION AND MEASUREMENT PROCEDURE;37
6.3.3;RESULTS AND DISCUSSION;39
6.3.4;REFERENCES;41
6.4;CHAPTER 4.
THE EFFECT OF DIFFUSION ON THE PHOTOCONDUCTIVITY OF THIN FILMS;42
6.4.1;ABSTRACT;42
6.4.2;INTRODUCTION;42
6.4.3;PHOTOCONDUCTIVITY EQUATIONS;42
6.4.4;NUMERICAL SOLUTION;44
6.4.5;DISCUSSION;44
6.4.6;REFERENCES;46
6.5;CHAPTER 5.
THE KINETIC BEHAVIOUR OF MOBILE IONS IN Si02 STUDIED WITHTSIC AND TVS MEASUREMENTS;47
6.5.1;ABSTRACT;32
6.5.2;INTRODUCTION;32
6.5.3;SAMPLES AND MEASUREMENTS;32
6.5.4;OBSERVATIONS IN THE INVERSION MODE;32
6.5.5;OBSERVATIONS IN THE ACCUMULATION MODE;35
6.5.6;REFERENCES;36
6.6;CHAPTER 6.
DIELECTRIC BREAKDOWN IN THERMAL Si02 GROWN FROM DOPEDPOLY CRYSTALLINE SILICON THIN FILMS;37
6.6.1;INTRODUCTION;37
6.6.2;SAMPLE PREPARATION AND MEASUREMENT PROCEDURE;37
6.6.3;RESULTS AND DISCUSSION;39
6.6.4;REFERENCES;41
6.7;CHAPTER 7.
THE EFFECT OF DIFFUSION ON THE PHOTOCONDUCTIVITY OF THIN FILMS;42
6.7.1;ABSTRACT;42
6.7.2;INTRODUCTION;42
6.7.3;PHOTOCONDUCTIVITY EQUATIONS;42
6.7.4;NUMERICAL SOLUTION;44
6.7.5;DISCUSSION;44
6.7.6;REFERENCES;46
6.8;CHAPTER 8.
THE KINETIC BEHAVIOUR OF MOBILE IONS IN Si02 STUDIED WITHTSIC AND TVS MEASUREMENTS;47
6.8.1;ABSTRACI;47
6.8.2;INTRODUCTION;47
6.8.3;THE TRAPPING ENERGY LEVELS OF MOBILE IONS AT POLY Si/Si02AND Si02/Si INTERFACES MEASURED WITH TSIC;47
6.8.4;DIRECT CALCULATING METHOD ABOUT INITIAL ENERGY DISTRIBUTIONOF MOBILE IONS AMONG THE INTERFACE TRAPPING STATES;48
6.8.5;DISCUSSION;49
6.8.6;ACKNOWLEDGMENT;51
6.8.7;REFERENCES;51
6.9;CHAPTER 9. INTERACTIONS BETWEEN SMALL-POLARONIC PARTICLES IN SOLIDS;52
6.9.1;ABSTRACT;52
6.9.2;INTRODUCTION;52
6.9.3;APPROACH;52
6.9.4;EQUIVALENT INTERSTITIALS;53
6.9.5;ELECTRON-HOLE INTERACTIONS;55
6.9.6;REFERENCES;56
6.10;CHAPTER 10.
SMALL POLARON HOPPING WITHOUT TRAP PARTICIPATION IN DISPERSIVETRANSIENT TRANSPORT IN Si02 OF MOS STRUCTURES;57
6.10.1;ABSTRACT;57
6.10.2;REFERENCES;61
6.11;CHAPTER 11.
ELECTRON TRANSPORT IN Si02 FILMS AT LOW TEMPERATURES*;62
6.11.1;ABSTRACT;62
6.11.2;INTRODUCTION;62
6.11.3;EXPERIMENTAL PROCEDURE AND RESULTS;63
6.11.4;DISCUSSION;66
6.11.5;REFERENCES;66
6.12;CHAPTER 12.
PHYSICAL EFFECTS IN LATERAL MIS STRUCTURES WITH ULTRATHINOXIDES;67
6.12.1;ABSTRACT;67
6.12.2;INTRODUCTION;67
6.12.3;EXPERIMENTAL;68
6.12.4;RESULTS;68
6.12.5;SOME APPLICATIONS OF THE LATERAL MIS TUNNEL STRUCTURES;71
6.12.6;SUMMARY;71
6.12.7;REFERENCES;71
6.13;CHAPTER 13. OXYGEN AS A TWO-LEVEL TUNNELING SYSTEM IN SiO2;72
6.13.1;ABSTRACT;72
6.13.2;INTRODUCTION;72
6.13.3;THEORY AND MODELS;73
6.13.4;PRESENT WORK;74
6.13.5;CONCLUSIONS;75
6.13.6;ACKNOWLEDGEMENT;75
6.13.7;REFERENCES;75
7;PART II: BULK PROPERTIES;76
7.1;CHAPTER 14.
PERIODIC STRUCTURAL JVDDELS AND RADIAL DISTRIBUTIONFUNCTIONS OF SiO : x=0. to 2.*;76
7.1.1;INTRODUCTION;76
7.1.2;MDDEL CONSTRUCTION;77
7.1.3;RESULTS;78
7.1.4;DISCUSSION;80
7.1.5;REFERENCES;80
7.2;CHAPTER 15.
THE OPTICAL ABSORPTION EDGE OF Si02;81
7.2.1;ABSTRACT;81
7.2.2;INTRODUCTION;81
7.2.3;THE MODEL;81
7.2.4;RESULTS;83
7.2.5;REFERENCES;85
7.3;CHAPTER 16.
BAND STRUCTURE AND DENSITY OF STATES OF 3-SILICON NITRIDE;86
7.3.1;ABSTRACT;86
7.3.2;INTRODUCTION;86
7.3.3;RESULTS;87
7.3.4;DISCUSSION;89
7.3.5;REFERENCES;89
7.4;CHAPTER 17.
ELECTRON MICROSCOPY AND RAMAN SPECTROSCOPY OFNb205, T a ^ and Si3N4 THIN FILMS;90
7.4.1;ABSTRACT;90
7.4.2;INTRODUCTION;90
7.4.3;THIN FILM DEPOSITION AND CHARACTERIZATION;90
7.4.4;RAMAN SPECTROSCOPY;92
7.4.5;ACKNOWLEDGEMENTS;94
7.4.6;REFERENCES;94
7.5;CHAPTER 18.
PHONONS AND SUBMICROCRYSTALLITES IN AMORPHOUS SiO.;95
7.5.1;ABSTRACT;95
7.5.2;CALCULATION OP THE PHONON DENSITY OP STATES;95
7.5.3;LOCAL DENSITY OP STATES;96
7.5.4;INTERMEDIATE-RANGE ORDER OF THE ATOMIC STRUCTUREQg AMORPHOPS'-STo:;97
7.5.5;COULOMB INTERACTIONS AND LO-TO SPLITTING;98
7.5.6;REFERENCES;99
7.6;CHAPTER 19.
CHEMICAL BONDING IN SiO;100
7.6.1;ABSTRACT;100
7.6.2;INTRODUCTION;100
7.6.3;EXPERIMENTAL METHODS;101
7.6.4;RESULTS AND DISCUSSION;101
7.6.5;REFERENCES;104
7.7;CHAPTER 20.
STRUCTURAL AND BOND FLEXIBILITY OF VITREOUS Si02 FILMS;105
7.7.1;ABSTRACT;105
7.7.2;INTRODUCTION;105
7.7.3;Si-0 BOND OVERLAP POPULATION AND ENERGY;106
7.7.4;THE IONICITY OF THE Si-0 BOND;106
7.7.5;PROPERTIES OF VITREOUS Si02;108
7.7.6;ACKNOWLEDGMENT;109
7.7.7;REFERENCES;109
8;PART III:
BULK DEFECTS;110
8.1;CHAPTER 21.
ELECTRON-TRANSFER MODEL FOR E1-CENTER OPTICAL ABSORPTION INS i 0 2;110
8.1.1;ABSTRACT;110
8.1.2;INTRODUCTION;110
8.1.3;PSEUDO-JAHN-TELLER APPROACH;111
8.1.4;DISCUSSION;113
8.1.5;REFERENCES;114
8.2;CHAPTER 22.
ASSIGNMENT OF THE OPTICAL ABSORPTION OF THE EjCENTER IN SiO„;115
8.2.1;ABSTRACT;115
8.2.2;INTRODUCTION;115
8.2.3;METHOD;116
8.2.4;RESULTS AND DISCUSSION;117
8.2.5;REFERENCES;119
8.3;CHAPTER 23.
ELECTRONIC STRUCTURE OF VACANCIES AND INTERSTITIALS IN SiO,;120
8.3.1;ABSTRACT;120
8.3.2;INTRODUCTION;120
8.3.3;IDEALIZED Si/SiO« INTERFACES;120
8.3.4;PERIODIC ARRAYS OF DEFECTS IN SiQ2 SUPERCELLS;122
8.3.5;DEALING WITH DEFECTS CLOSE TO IDEALIZED INTERFACES;124
8.3.6;REFERENCES;124
8.4;CHAPTER 24.
SURFACE AND BULK VIBRATIONS IN ION-IMPLANTED AMORPHOUS SILICA*;125
8.4.1;ABSTRACT;125
8.4.2;INTRODUCTION;125
8.4.3;EXPERIMENTAL;126
8.4.4;RESULTS AND DISCUSSION;126
8.4.5;CONCLUSIONS;129
8.4.6;REFERENCES;129
8.5;CHAPTER 25.
ENERGY DISTRIBUTION OF ELECTRON TRAPPING DEFECTS IN THICK-OXIDE MNOSSTRUCTURES;130
8.5.1;ABSTRACT;130
8.5.2;INTRODUCTION;130
8.5.3;EXPERIMENT;130
8.5.4;RESULTS AND DISCUSSIONS;132
8.5.5;ACKNOWLEDGEMENTS;134
8.5.6;REFERENCES;134
8.6;CHAPTER 26.
TRAPS IN SiO -Si STRUCTURE DETERMINED BY ELECTROCHEMICAL METHOD;135
8.6.1;ABSTRACT;135
8.6.2;INTRODUCTION;135
8.6.3;EXPERIMENTAL TECHNIQUE;136
8.6.4;RESULTS AND DISCUSSION;136
8.6.5;CONCLUSIONS;139
8.6.6;REFERENCES;139
8.7;CHAPTER 27.
CHARGE TRAPPING AND ASSOCIATED LUMINESCENCE IN MOS OXIDE LAYERS;140
8.7.1;ABSTRACT;140
8.7.2;INTRODUCTION;140
8.7.3;EXPERIMENTAL DETAILS;140
8.7.4;RESULTS;141
8.7.5;ANALYSIS;141
8.7.6;DISCUSSION;143
8.7.7;ACKNOWLEDGEMENTS;144
8.7.8;REFERENCES;144
8.8;CHAPTER 28.
TIME DECAY OF PHOTOLUMINESCENCE FROM AMORPHOUS SiO,;145
8.8.1;ABSTRACT;145
8.8.2;INTRODUCTION;145
8.8.3;EXPERIMENTAL DETAILS;145
8.8.4;RESULTS;146
8.8.5;REFERENCES;149
8.9;CHAPTER 29.
ELECTRON-BEAM-INDUCED LUMINESCENCE IN SiO,;150
8.9.1;ABSTRACT;150
8.9.2;INTRODUCTION;150
8.9.3;EXPERIMENT;151
8.9.4;RESULTS AND DISCUSSION;151
8.9.5;ACKNOWLEDGMENT:;154
8.9.6;REFERENCES:;154
8.10;CHAPTER 30.
PHOTOIONIZATION CROSS SECTION OF THE 2.5 eV ELECTRON TRAP IN SiO,;155
8.10.1;ABSTRACT;155
8.10.2;INTRODUCTION;155
8.10.3;EXPERIMENTAL PROCEDURE AND DETAILS;155
8.10.4;RESULTS AND ANALYSIS;157
8.10.5;DISCUSSION;158
8.10.6;ACKNOWLEDGEMENT;159
8.10.7;REFERENCES;159
8.11;CHAPTER 31.
HYDROGENATION OF AMORPHOUS SILICON NITRIDE*;160
8.11.1;ABSTRACT;160
8.11.2;INTRODUCTION;160
8.11.3;EXPERIMENTAL DETAILS;160
8.11.4;RESULTS AND DISCUSSION;161
8.11.5;ACKNOWLEDGEMENT;163
8.11.6;REFERENCES;164
9;PART IV:
OXIDATION - Si;165
9.1;CHAPTER 32.
INITIAL OXIDATION OF ION-SPUTTERED SILICON (100);165
9.1.1;ABSTRACT;165
9.1.2;INTRODUCTION;165
9.1.3;EXPERIMENTAL;166
9.1.4;RESULTS;167
9.1.5;SUMMARY;168
9.1.6;ACKNOWLEDGEMENT;169
9.1.7;REFERENCES;169
9.2;CHAPTER 33.
FIXED SURFACE CHARGE DENSITY GENERATION AT THE INTERFACEOF ANODIC SI02-Si SYSTEMS;170
9.2.1;ABSTRACT;170
9.2.2;INTRODUCTION;170
9.2.3;EXPERIMENTAL;170
9.2.4;RESULTS;171
9.2.5;DISCUSSION;173
9.2.6;SUMMARY;173
9.2.7;ACKNOWLEDGMENTS;173
9.2.8;REFERENCES;174
9.3;CHAPTER 34.
TRACER MEASUREMENTS OF NETWORK OXYGEN EXCHANGE DURING WATERDIFFUSION IN Si0o FILMS;175
9.3.1;INTRODUCTION;175
9.3.2;EXPERIMENT;176
9.3.3;DATA ANALYSIS;177
9.3.4;CONCLUSIONS;178
9.3.5;REFERENCE;179
9.4;CHPTER 35.
AN 0 STUDY OF THE OXYGEN EXCHANGE IN SILICON OXIDE FILMSDURING THERMAL TREATMENT IN WATER VAPOR*;180
9.4.1;ABSTRACT;180
9.4.2;INTRODUCTION;180
9.4.3;EXPERIMENTAL PROCEDURES;181
9.4.4;RESULTS;181
9.4.5;DISCUSSION;184
9.4.6;REFERENCES;184
9.5;CHAPTER 36.
X-RAY PHOTOELECTRON SPECTROSCOPY OF SILOXENE: A MODEL COMPOUNDREPRESENTING INTERMEDIATE OXIDATION STATES OF SILICON AND INTERFACEDEFECT SITES;185
9.5.1;ABSTRACT;185
9.5.2;INTRODUCTION;185
9.5.3;EXPERIMENTAL;185
9.5.4;RESOLUTION ENHANCEMENT/DECONVOLUTION;186
9.5.5;RESULTS AND DISCUSSION;187
9.5.6;CONCLUSIONS;188
9.5.7;ACKNOWLEDGMENTS;189
9.5.8;REFERENCES;189
9.6;CHAPTER 37.
EFFECT OF ANNEALING IN 0o Nn MIXTURE ON THE MOS CHARACTERISTICS;190
9.6.1;ABSTRACT;190
9.6.2;INTRODUCTIOJ;190
9.6.3;PROCEDURE;190
9.6.4;RESULTS;191
9.6.5;DISCUSSIONS AND CONCLUSIONS;191
9.6.6;REFERENCES;193
10;PART V:
OXIDATION - COMPOUND SEMICONDUCTORS;194
10.1;CHAPTER 38.
CHEMICAL REACTIONS IN NATIVE OXIDEFILMS FORMED ON III-V SEMICONDUCTORS;194
10.1.1;ABSTRACT;194
10.1.2;INTRODUCTION;194
10.1.3;EXPERIMENTAL;195
10.1.4;RESULTS AND DISCUSSION;195
10.1.5;SUMMARY;202
10.1.6;Acknowledgements;203
10.1.7;References;203
10.2;CHAPTER 39.
ANODIC OXIDE INSULATORS ON InP AND InAs;204
10.2.1;ABSTRACT;204
10.2.2;INTRODUCTION;204
10.2.3;EXPERIMENTAL TECHNIQUE;205
10.2.4;DISCUSSION OF RESULTS;205
10.2.5;Conclusions;208
10.2.6;Acknowledgements;208
10.2.7;References;208
10.3;CHAPTER 40.
OPTICAL PROPERTIES AND INTERFACE ANALYSIS OF THE GaAs-ANODIC OXIDESYSTEM;210
10.3.1;ABSTRACT;210
10.3.2;INTRODUCTION;210
10.3.3;EXPERIMENTAL;210
10.3.4;RESULTS AND DISCUSSION;210
10.3.5;REFERENCES;214
10.4;CHAPTER 41.
XPS STUDY OF GaAs(lOO) SURFACE OXIDE CHEMISTRY AND INTERFACE POTENTIAL;215
10.4.1;References;219
10.5;CHAPTER 42.
GERMANIUM (OXY)NITRIDE BASED SURFACE PASSIVATIONTECHNIQUE AS APPLIED TO GaAs & InP;220
10.5.1;Introduction;220
10.5.2;Experimental;220
10.5.3;Results and Discussion;221
10.5.4;Conclusions;224
10.5.5;References;224
10.6;CHAPTER 43.
KrF"LASER ANNEALING OF NATIVE OXIDES ON GaAs;225
10.6.1;ABSTRACT;225
10.6.2;INTRODUCTION;225
10.6.3;EXPERIMENTAL RESULTS;225
10.6.4;REFERENCES;229
10.7;CHAPTER 44.
ANODIC OXIDATION OF Hg().68Cd0.32 T e;230
10.7.1;INTRODUCTION;230
10.7.2;EXPERIMENTAL;230
10.7.3;RESULTS;231
10.7.4;REFERENCES;233
11;PART VI:
INTERFACES;234
11.1;CHAPTER 45.
CHEMICAL BONDING AT METAL/Si02/Si(l 11 ) INTERFACES;234
11.1.1;ABSTRACT;234
11.1.2;INTRODUCTION;234
11.1.3;EXPERIMENT;234
11.1.4;THE Sid 11) - SiQ2 INTERFACE;235
11.1.5;THE AI · SiQ2 INTERFACE;236
11.1.6;THE Au · SiQ2 INTERFACE;237
11.1.7;CONCLUSIONS;238
11.1.8;ACKNOWLEDGEMENTS;239
11.1.9;REFERENCES;239
11.2;CHAPTER 46.
DIPOLE LAYERS AT THE GOLD-Si02 INTERFACE;240
11.2.1;INTRODUCTION;240
11.2.2;THEORY;240
11.2.3;EXPERIMENTAL;242
11.2.4;RESULTS;243
11.2.5;DISCUSSION;244
11.2.6;REFERENCES;244
11.3;CHAPTER 47.
MEASUREMENT OF TUNNELING INTO INTERFACE STATES;245
11.3.1;INTRODUCTION;245
11.3.2;EXPERIMENT;245
11.3.3;ANALYSIS;245
11.3.4;CONCLUSIONS;247
11.3.5;REFERENCES;248
11.4;CHAPTER 48.
IMPROVED EXPERIMENTAL CHARACTERIZATIONOF THE Si/Si02 INTERFACE;249
11.4.1;ABSTRACT;249
11.4.2;REFERENCES;253
11.5;CHAPTER 49.
GAP STATES OF CRYSTALLINE SILICON AND AMORPHOUS Si0o SYSTEM;254
11.5.1;ABSTRACT;254
11.5.2;INTRODUCTION;254
11.5.3;FORMULATION OF HAMILTONIAN;255
11.5.4;MODEL AND CALCULATION PROCEDURE;255
11.5.5;RESULTS;256
11.5.6;CONCLUSIONS;257
11.5.7;ACKNOWLEDGMENT;257
11.5.8;REFERENCES;258
11.6;CHAPTER 50.
INTERFACE WIDTH AND STRUCTURE OF THE Si02 LAYER ONOXIDIZED Si;259
11.6.1;ABSTRACT;259
11.6.2;INTRODUCTION;259
11.6.3;GENERATION OF ROUGHNESS BY ION SPUTTERING;259
11.6.4;EXPERIMENTAL;260
11.6.5;RESULTS AND DISCUSSION;261
11.6.6;CONCLUSIONS;262
11.6.7;REFERENCES;262
11.7;CHAPTER 51.
CHEMICAL COMPOSITION AND KINETIC LAW OF THE Si02/Si INTERFACE;263
11.7.1;ABSTRACT;263
11.7.2;INTRODUCTION;263
11.7.3;EXPERIMENTAL PROCEDURE;264
11.7.4;RESULTS AND DISCUSSION;264
11.7.5;CONCLUSIONS;267
11.7.6;REFERENCES;267
11.8;CHAPTER 52.
AUGER ANALYSIS COUPLED WITH CAPACITANCE STUDIESOF THE Si-Si02 INTERFACE;268
11.8.1;ABSTRACT;268
11.8.2;INTRODUCTION;268
11.8.3;EXPERIMENTAL;268
11.8.4;RESULTS AND DISCUSSION;269
11.8.5;REFERENCES;272
11.9;CHAPTER 53.
SOME METAL - SILICON DIOXIDE INTERFACE PHENOMENA;273
11.9.1;ABSTRACT;273
11.9.2;INTRODUCTION;273
11.9.3;THE EFFECT OF HYDROGEN ON PALLADIUM WORK FUNCTION;273
11.9.4;THE EFFECT OF SODIUM ON MERCURY WORK FUNCTION;274
11.9.5;CHANGES IN ADHESION BETWEEN PALLADIUM M D SILICON DIOXIDE;275
11.9.6;HYDROGEN INDUCED DRIFT IN PD GATE MOS DEVICES;275
11.9.7;THE EFFECT OF HYDROGEN ON ION DRIFT IN PD GATE MOS CAPACITORS;276
11.9.8;CONCLUSION;277
11.9.9;REFERENCES;277
11.10;CHAPTER 54.
FIELD EFFECT SPECTROSCOPY OF SEMICONDUCTOR-INSULATORINTERFACE STATES USING THIN FILM TRANSISTOR STRUCTURES;278
11.10.1;ABSTRACT;278
11.10.2;INTRODUCTION;278
11.10.3;EXPERIMENTAL METHOD;278
11.10.4;RESULTS;279
11.10.5;REFERENCES;282
11.11;CHAPTER 55.
THE PROPERTIES AND APPLICATIONS OF GaAs AND InP MIS STRUCTURES;283
11.11.1;ABSTRACT;283
11.11.2;INTRODUCTION;283
11.11.3;SURFACES OF GaAs AND InP;283
11.11.4;MIS STRUCTURES ON GaAs AND ÃçÑ;285
11.11.5;TECHNOLOGICAL IMPLICATIONS AND PROSPECTS;286
11.11.6;REFERENCES;287
11.11.7;ACKNOWLEDGMENTS;287
11.12;CHAPTER 56.
A STUDY OF THE ELECTRONIC STRUCTURE OF THE GaAs/NATURALOXIDE INTERFACE;288
11.12.1;ABSTRACT;288
11.12.2;INTRODUCTION;288
11.12.3;EXPERIMENTAL;288
11.12.4;RESULTS;289
11.12.5;DISCUSSION;290
11.13;CHAPTER 57.
INTERFACE STATES IN GaAs/LaF3 CONFIGURATIONS;293
11.13.1;ABSTRACT;293
11.13.2;REFERENCES;297
12;PART VII:
DEFECTS AT INTERFACES;298
12.1;CHAPTER 58.
GENERATION OF INTERFACE STATES IN THE Si-Si02 SYSTEMBY PHOTOINJECTION OF ELECTRONS;298
12.1.1;ABSTRACT;298
12.1.2;INTRODUCTION;298
12.1.3;SAMPLE PREPARATION AND EXPERIMENTAL TECHNIQUES;298
12.1.4;GENERATION OF INTERFACE STATES;299
12.1.5;ANNEALING PROPERTIES OF THE INTERFACE STATES;300
12.1.6;CONCLUSIONS;301
12.1.7;ACKNOWLEDGEMENT;302
12.1.8;REFERENCES;302
12.2;CHAPTER 59.
REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAPGENERATION AT Si/Si09 INTERFACE;303
12.2.1;ABSTRACT;303
12.2.2;INTRODUCTION;303
12.2.3;EXPERIMENTAL TECHNIQUES;304
12.2.4;CHARGING EFFECTS IN XPS;304
12.2.5;ELECTRON-GENERATED TRAPS AT THE OXIDE/VACUUM SURFACE;305
12.2.6;INTERFACE STATE GENERATION;306
12.2.7;CONCLUSIONS;307
12.2.8;ACKNOWLEDGMENTS;308
12.2.9;REFERENCES;308
12.3;CHAPTER 60.
STUDIES OF ELECTRON-BEAM RADIATION AND HYDROGENATIONEFFECTS ON Si-Si02 INTERFACE AND Si02 BY XPS;309
12.3.1;ABSTRACT;309
12.3.2;INTRODUCTION;309
12.3.3;DEFECT DISTRIBUTION IN Si-SiO? SYSTEM;309
12.3.4;EXPERIMENTAL DETAILS;311
12.3.5;EXPERIMENTAL RESULTS AND DISCUSSIONS;311
12.3.6;CONCLUSION;313
12.3.7;ACKNOWLEDGEMENTS;313
12.3.8;REFERENCES;313
12.4;CHAPTER 61.
A MICROSCOPIC MODEL FOR THE Qss DEFECTAT THE Si/Si0o INTERFACE;314
12.4.1;ABSTRACT;314
12.4.2;INTRODUCTION;314
12.4.3;BONDING DEFECTS IN a-SiOp;315
12.4.4;THE LOCAL ATOMIC STRUCTURE OF Qcc;316
12.4.5;ELECTRONIC STRUCTURE OF 0*(3Ô);316
12.4.6;SUMMARY;317
12.4.7;ACKNOWLEDGEMENT;317
12.4.8;REFERENCES;318
12.5;CHAPTER 62.
EPR DEFECTS AND INTERFACE STATES ON OXIDIZED (111) AND (100) SILICON;319
12.5.1;ABSTRACT;319
12.5.2;INTRODUCTION;319
12.5.3;EXPERIMENTAL;319
12.5.4;RESULTS AND DISCUSSION;320
12.5.5;CONCLUDING REMARKS;323
12.5.6;REFERENCES;323
12.6;CHAPTER 63.
CHARACTERISTIC DEFECTS AT THE Si-Si02 INTERFACE;324
12.6.1;ABSTRACT;324
12.6.2;INTRODUCTION;324
12.6.3;SAMPLE PREPARATION AND MEASUREMENT TECHNIQUES;324
12.6.4;EXPERIMENTAL RESULTS;325
12.6.5;DISCUSSION AND CONCLUSIONS;327
12.6.6;ACKNOWLEDGEMENT;328
12.6.7;REFERENCES;328
12.7;CHAPTER 64.
IMPURITY SEGREGATION AT THE Si/SiC^ INTERFACE*;329
12.7.1;ABSTRACT;329
12.7.2;INTRODUCTION;329
12.7.3;EXPERIMENTAL;330
12.7.4;SEGREGATION MODELING;331
12.7.5;SUMMARY;333
12.7.6;REFERENCES;333
12.8;CHAPTER 65.
INVESTIGATION OF HYDROGEN AND CHLORINE AT THE Si02/Si INTERFACE;334
12.8.1;ABSTRACT;334
12.8.2;INTRODUCTION;334
12.8.3;EXPERIMENTAL;335
12.8.4;RESULTS;335
12.8.5;SIMS;335
12.8.6;DISCUSSION;337
12.8.7;ACKNOWLEDGEMENT;338
12.8.8;REFERENCES;338
12.9;CHAPTER 66.
SURFACE-POTENTIAL DEPENDENCE OF EPR CENTERS AT THE Si/Si02 INTERFACE;339
12.9.1;ABSTRACT;339
12.9.2;INTRODUCTION;339
12.9.3;EXPERIMENTAL DETAILS;340
12.9.4;RESULTS AND DISCUSSION;341
12.9.5;CONCLUDING REMARKS;342
12.9.6;ACKNOWLEDGMENT;343
12.9.7;REFERENCES;343
12.10;CHAPTER 67.
ELECTRON BEAM INDUCED DEFECTS AT Si-Si02 INTERFACE;344
12.10.1;ABSTRACT;344
12.10.2;INTRODUCTION;344
12.10.3;EXPERIMENTAL DETAILS;344
12.10.4;RESULTS;345
12.10.5;DISCUSSION - CONCLUSION;347
12.10.6;ACKNOWLEDGEMENT;348
12.10.7;REFERENCES;348
13;PART VIII:
DEVICE PHYSICS;349
13.1;Chapter 68. nomalous gate current on avalanche hot electron injectionin MOS structures
;349
13.1.1;ABSTRACT;349
13.1.2;INTRODUCTION;349
13.1.3;SAMPLE PREPARATION;349
13.1.4;EXPERIMENTAL TECHNIQUE;350
13.1.5;EXPERIMENTAL RESULTS;350
13.1.6;DISCUSSION;351
13.1.7;CONCLUSION;353
13.1.8;ACKNOWLEDGEMENT;353
13.1.9;REFERENCES;353
13.2;CHAPTER 69.
NOISE FROM MOS TRANSISTORS AT WEAK AND UNIFORM INVERSION;354
13.2.1;DISCUSSION;356
13.2.2;REFERENCES;356
13.3;CHAPTER 70.
POLYMERIZED LANGMUIR FILM MIS STRUCTURES;357
13.3.1;ABSTRACT;357
13.3.2;INTRODUCTION;357
13.3.3;PREPARATION OF DIACETYLENE LANGMUIR FILM STRUCTURES;357
13.3.4;DIACETYLENE POLYMER FILM CHARACTERISTICS;359
13.3.5;MIS CHARACTERISTICS;359
13.3.6;CONCLUSION;361
13.3.7;ACKNOWLEDGEMENTS;361
13.3.8;REFERENCES;361
13.4;CHAPTER 71. MOS WEAROUT AND BREAKDOWN STATISTICS;362
13.4.1;ABSTRACT;362
13.4.2;INTRODUCTION;362
13.4.3;EXPERIMENTAL;362
13.4.4;RESULTS;363
13.4.5;DISCUSSION;364
13.4.6;CONCLUSIONS;365
13.4.7;ACKNOWLEDGMENTS;365
13.4.8;REFERENCES;365
13.5;CHAPTER 72.
EFFECT OF PREPARATION METHODS ON PERFORMANCE OFMOS PHOTOVOLTAIC SOLAR CELL;366
13.5.1;ABSTRACT;366
13.5.2;INTRODUCTION;366
13.5.3;EXPERIMENTAL DETAILS;366
13.5.4;RESULTS AND DISCUSSIONS;367
13.5.5;CONCLUSION;369
13.5.6;REFERENCES;369
14;LIST OF
PARTICIPANTS;372
15;AUTHOR INDEX;381