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Tunneling Field Effect Transistor Technology

  • Book
  • © 2016

Overview

Editors:
  1. Lining Zhang

    1. and Technology, Hong Kong University of Science, Hong Kong, China

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    You can also search for this editor in PubMed   Google Scholar

  2. Mansun Chan

    1. and Technology, Hong Kong University of Science, Hong Kong, China

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    You can also search for this editor in PubMed   Google Scholar

  • comprehensive reference to tunneling field effect transistors (TFETs)
  • all aspects of TFETs, from device process to modeling and applications
  • Enables design of power-efficient integrated circuits, with low power consumption TFETs

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-ix
    Download chapter PDF

  2. Steep Slope Devices and TFETs

    • Lining Zhang, Jun Huang, Mansun Chan
    Pages 1-31

  3. Tunneling FET Fabrication and Characterization

    • Tao Yu, Judy L. Hoyt, Dimitri A. Antoniadis
    Pages 33-60

  4. Compact Models of TFETs

    • Lining Zhang, Mansun Chan
    Pages 61-87

  5. Challenges and Designs of TFET for Digital Applications

    • Ming-Long Fan, Yin-Nien Chen, Pin Su, Ching-Te Chuang
    Pages 89-109

  6. Atomistic Simulations of Tunneling FETs

    • Fei Liu, Qing Shi, Jian Wang, Hong Guo
    Pages 111-149

  7. Quantum Transport Simulation of III-V TFETs with Reduced-Order \( \varvec{k} \cdot \varvec{p} \) Method

    • Jun Z. Huang, Lining Zhang, Pengyu Long, Michael Povolotskyi, Gerhard Klimeck
    Pages 151-180

  8. Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation

    • Hao Wang
    Pages 181-210

  9. Back Matter

    Pages 211-213
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Keywords

About this book

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Editors and Affiliations

  • and Technology, Hong Kong University of Science, Hong Kong, China

    Lining Zhang, Mansun Chan

Bibliographic Information

  • Book Title: Tunneling Field Effect Transistor Technology

  • Editors: Lining Zhang, Mansun Chan

  • DOI: https://doi.org/10.1007/978-3-319-31653-6

  • Publisher: Springer Cham

  • eBook Packages: Engineering, Engineering (R0)

  • Copyright Information: Springer International Publishing Switzerland 2016

  • Hardcover ISBN: 978-3-319-31651-2Published: 15 April 2016

  • Softcover ISBN: 978-3-319-81087-4Published: 22 April 2018

  • eBook ISBN: 978-3-319-31653-6Published: 09 April 2016

  • Edition Number: 1

  • Number of Pages: IX, 213

  • Number of Illustrations: 25 b/w illustrations, 122 illustrations in colour

  • Topics: Circuits and Systems, Electronic Circuits and Devices, Electronics and Microelectronics, Instrumentation

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