Modeling and Characterization of RF and Microwave Power FETs

Erscheinungsjahr 2015
ISBN: 978-0-521-87066-5
Verlag: Cambridge University Press

Buch, Englisch, 388 Seiten, Format (B × H): 175 mm x 250 mm, Gewicht: 834 g

Reihe: The Cambridge RF and Microwave Engineering Series

This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.

Autoren/Hrsg.

Aaen, Peter

Plá, Jaime A.

Wood, John

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

1. RF and microwave power transistors; 2.An introduction to the compact modeling of high power FETs; 3. Electrical measurement techniques; 4. Passive components: simulation and modeling; 5. Thermal characterization and modeling; 6. Modeling the active transistor; 7. Function approximation for compact modeling; 8. Model implementation in CAD tools; 9. Model validation; About the authors; Index.

Über Autor(innen)

Aaen, Peter
Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona.

Plá, Jaime A.
Jaime A. Piá is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona.

Wood, John
John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.