Buch, Englisch
Principles of Next-Generation Devices
Buch, Englisch
ISBN: 978-1-394-31911-4
Verlag: Wiley
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
Weitere Infos & Material
I Introduction to Theory of Phase Transition 9
1 Demystifying Phase Transition 13
1.1 Introduction: The mystery of phase transition 13
1.2 Buckling of a slender beam captures the essence of phase transition 14
1.3 Snap transition of an pre-buckled stick 19
1.4 A few observations about phase transition 25
1.5 Minimum Energy, Maximum Flow, and Maximum Entropy Principles 27
1.6 Conclusions 28
2 Phase Transition in NEMS 31
2.1 Introduction: MEMS/NEMS phase transition 31
2.2 Equilibrium Phase transition of MEMS/NEMS 32
2.3 Negative capacitance and spring softening 39
2.4 Phase transition and hysteretic response 42
2.5 Dynamics of electro-mechanical switches: Unsteady phase transition 46
2.6 Conclusions 50
3 Electronic Phase Transition in Ferroelectrics 53
3.1 Introduction: What is a ferroelectric material 53
3.2 A simple model for ferroelectric capacitors 54
3.3 Landau Theory of Phase Transition 58
3.4 Conclusions 63
4 Material Phase Transition by van der Waals Theory 65
4.1 Phase transition in Homogeneous systems 65
4.2 vdW equation in terms of critical vc, pc, Tc 68
4.3 Implications of scaled vdW equation 71
4.4 Energy functions of vdW equation 73
4.5 Conclusions 75
5 Phase-Field Theory Describes Semiconductor Memories 77
5.1 The need for a phase-field theory 78
5.2 Phase-Field model generalizes Landau Theory 78
5.3 Approximate solution of the phase field model 80
5.4 Conclusions 84
II Phase Transition in Transistors 87
6 Voltage-Driven Phase Transition in Logic Transistors 93
6.1 Phenomenological theory of NCFETs 94
6.2 NCFET Design by FE negative capacitance 96
6.3 Hysteresis as a by-product of AV maximization 101
6.4 ZSubFET for Hysteresis-free abrupt switching 103
6.5 Physics-based Circuit Model for NCFET 107
6.6 Features of NCFET I-V Characteristics 108
6.7 Conclusions 112
7 Channel Phase Transition 117
7.1 Introduction to MottFET and PhaseFET 117
7.2 Theory of electronic phase transition 118
7.3 Theory of MottFET 123
7.4 Theory of PhaseFET 127
7.5 Conclusions 130
8 Current Driven Phase Transition 135
8.1 Steep switching in RTD, TFET, and NEMFET 136
8.2 RTD: Device structure and band diagram 136
8.3 Single Electron Transistors 141
8.4 Principles of Tunnel FET 144
8.5 NEMS-relay as a logic transistor, NEMFET 149
8.6 Conclusions 153
9 SuperFET 157
9.1 Negative Capacitance Tunnel FET (NC-TFET) 158
9.2 Phase-Change Tunnel FET (PC-TFET) 159
9.3 Conclusions 161
III Phase Transition in Memories 163
10 Two-terminal non-volatile memories 167
10.1 Introduction 168
10.2 Physics of FeRAM Memory 168
10.3 Physics of RRAM memory 175
10.4 Physics of Phase change memory 182
10.5 Memories based on Tunnel Junction 186
10.6 Conclusions 188
11 FeFET 193
11.1 Introduction 193
11.2 Device structure and I - V characteristics 194
11.3 Design of FeFET gate stack 195
11.4 Threshold voltage and Memory Window 196
11.5 Conclusions 205
IV Phase Transition in Biosensors 209
12 Frequency and Amplitude Phase Transition in BioMEMS 213
12.1 Introduction 213
12.2 The classical cantilever BioMEMS 214
12.3 Bifurcation biosensing and amplitude phase transition 219
12.4 Conclusions 222
13 Phase-Transition in Electro-mechanical Biosensors 225
13.1 Introduction 225
13.2 Principle of Operation of FlexureFET 226
13.3 Biomolecule adsorption changes spring constant 229
13.4 Signal-to-Noise Ratio 232
13.5 Conclusions 236
14 Phase-Transition in Potentiometric Nano-Biosensors 239
14.1 Introduction 239
14.2 Charging of the oxide/electrolyte surface 241
14.3 Qsurf is balanced by Qdl and Qs 243
14.4 Sensor I-V Characteristics 245
14.5 Figures of merit: Sensitivity and buffer capacity 246
14.6 NCFET improves ISFET sensitivity 248
14.7 Signal-to-noise ratio of ISFET and NC-ISFET 250
14.8 Conclusions 252
V Phase transition in Circuits 255
15 Circuit Applications of Phase-Transition Transistors 259
15.1 Introduction 259
15.2 CMOS Inverter with NCFET 260
15.3 Performance of an SRAM Cell with NCFET 261
15.4 Ring Oscillator with NCFET 264
15.5 A PhaseFET inverter 266
15.6 RO and PTM-based Relaxation Oscillator 268
15.7 Conclusions 270
16 NEMFET Logic Circuits 273
16.1 Introduction 273
16.2 4-T and 6-T relays for complementary logic 274
16.3 An inverter created by 4-T NEMFETs 275
16.4 4-T NEM-relay can implement Complex Logic 277
16.5 6-T see-saw logic 278
16.6 Conclusions 279
17 Neuromorphic Circuits 283
17.1 The need for a new computing model 283
17.2 Introduction to Neural Networks 284
17.3 Operation of ”non-spiking” NNs 287
17.4 Challenges of NN based on phase-transition memories 290
17.5 Cross-bar architecture with FeFET 294
17.6 Conclusions 296
18 Oscillator-based Phase Logic 301
8.1 Phase-based logic vs other logic models 301
18.2 Sub-Harmonic Injection Locking (SHIL) creates oscillators with discrete phases 303
18.3 Boolean logic with Coupled Oscillators 309
18.4 Coupled oscillators solve optimization problems 310
18.5 Conclusions 317
19 Conclusions and Outlook 321
VI Appendices 325
Appendix A Fundamentals of Semiconductor Physics 327
A.1 Introduction 327
A.2 Conclusions 331
Appendix B Theory of Classical MOSFET 333
B.1 Device structure and Operating principle 333
B.2 Drain Current Analytical Model 334
B.3 Conclusions 348
Appendix C MOSFET as charge, pH, and image sensors 349
C.1 Introduction: MOSFET is a versatile device 349
C.2 Conclusions 353
Appendix D Basic Digital Circuit Elements 355
D.1 Introduction 355
D.2 CMOS Inverter 356
D.3 SRAM 359
D.4 DRAM 360
D.5 Ring Oscillator 361
D.6 Conclusions 363
Appendix E Minimum Energy, Maximum Flow, and Maximum Entropy 365
E.1 Background and Introduction 365
E.2 Lagrange Principle unifies Conservative and Dissipative
