Fundamentals of Semiconductor Devices

2. Auflage 2017
ISBN: 978-0-07-352956-1
Verlag: McGraw Hill LLC

Buch, Englisch, 832 Seiten, Format (B × H): 196 mm x 239 mm, Gewicht: 1302 g

Fundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. With this emphasis, the reader will appreciate the underlying physics behind the equations derived and their range of applicability. The author’s clear writing style, comprehensive coverage of the core material, and attention to current topics are key strengths of this book.

Autoren/Hrsg.

Anderson, Betty Lise

Anderson, Richard L

Anderson, Richard

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

Part 1 - Materials1) Electron Energy and States in Semiconductors2) Homogeneous Semiconductors3) Current Flow in Homogeneous Semiconductors4) Nonhomogeneous SemiconductorsSupplement to Part 1Supplement 1ASupplement 1B Part 2 - Diodes5) Prototype pn Homojunctions6) Additional Considerations for DiodesSupplement to Part 2Part 3 - Field-Effect Transistors7) The MOSFET8) Additional Considerations for FETsSupplement to Part 3Part 4 - Bipolar Junction Transistors9) Bipolar Junction Devices: Statics10) Time-Dependent Analysis of BJTsSupplement to Part 4Part 5 - Optoelectronic Devices11) Optoelectronic DevicesAppendix A - ConstantsAppendix B - List of SymbolsAppendix C - FabricationAppendix D - Density-of-States Function, Density-of-States Effective Mass, Conductivity Effective MassAppendix E - Some Useful IntegralsAppendix F - Useful EquationsAppendix G - List of Suggested Readings