Multi-Threshold CMOS Digital Circuits

Managing Leakage Power
Erscheinungsjahr 2012
ISBN: 978-1-4613-5053-8
Verlag: Springer

Buch, Englisch, 216 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 376 g

Multi-Threshold CMOS Digital Circuits Managing Leakage Power discusses the Multi-threshold voltage CMOS (MTCMOS) technology, that has emerged as an increasingly popular technique to control the escalating leakage power, while maintaining high performance. The book addresses the leakage problem in a number of designs for combinational, sequential, dynamic, and current-steering logic. Moreover, computer-aided design methodologies for designing low-leakage integrated circuits are presented. The book give an excellent survey of state-of-the-art techniques presented in the literature as well as proposed designs that minimize leakage power, while achieving high-performance.
Multi-Threshold CMOS Digital Circuits Managing Leakage Power is written for students of VLSI design as well as practicing circuit designers, system designers, CAD tool developers and researchers. It assumes a basic knowledge of digital circuit design and device operation, and covers a broad range of circuit design techniques.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Anis, Mohab

Elmasry, Mohamed

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Mathematik | Informatik EDV | Informatik Professionelle Anwendung Computer-Aided Design (CAD)
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik

Inhaltsverzeichnis

1. Introduction.- References.- 2. Leakage Power: Challenges and Solutions.- 2.1 Introduction.- 2.2 Power Dissipation in CMOS Digital Circuits.- 2.3 Impact of Technology Scaling on Leakage Power.- 2.4 (Vdd-Vth) Design Space.- 2.5 Total Power Management.- 2.6 Leakage Power Control Circuit Techniques.- 2.7 Chapter Summary.- References.- 3. Embedded Mtcmos Combinational Circuits.- 3.1 Introduction.- 3.2 Basic Concept.- 3.3 The Power Minimization Problem.- 3.4 Algorithms.- 3.5 Choosing the High-Vth Value.- 3.6 Chapter Summary.- References.- 4. Mtcmos Combinational Circuits Using Sleep Transistors.- 4.1 Introduction.- 4.2 MTCMOS Design: Overview.- 4.3 Variable Breakpoint Switch Level Simulator [1].- 4.4 Hierarchical Sizing Based on Mutually Exclusive Discharge Patterns.- 4.5 Designing High-Vth Sleep Transistors, the Average Current Method [6].- 4.6 Drawbacks of Techniques.- 4.7 Distributed Sleep Transistors [9] [10].- 4.8 Clustering Techniques.- 4.9 Hybrid Heuristic Techniques.- 4.10 Virtual Ground Bounce.- 4.11 Results: Taking ground bounce into account.- 4.12 Power Management of Sleep Transistors.- 4.13 Chapter Summary.- References.- 5. Mtcmos Sequential Circuits.- 5.1 Introduction.- 5.2 MTCMOS Latch Circuit.- 5.3 MTCMOS Balloon Circuit.- 5.4 Intermittent Power Supply Scheme.- 5.5 Auto-Backgate-Controlled MTCMOS.- 5.6 Virtual Rails Clamp (VRC) Circuit.- 5.7 Leakage Sneak Paths in MTCMOS Sequential Circuits.- 5.8 Interfacing MTCMOS and CMOS blocks.- 5.9 Impact of the High-Vth and Low-Vth values on MTCMOS Sequential Circuit Design.- 5.10 Leakage Feedback Gates.- 5.11 Chapter Summary.- References.- 6. Mtcmos Dynamic Circuits.- 6.1 Introduction.- 6.2 Clock-Delayed Domino Logic: Overview.- 6.3 HS-Domino Logic.- 6.4 MTCMOS CD-Domino Logic: Analysis and Overview.- 6.5 MTCMOS HS-Domino (MHS-Domino) Logic.- 6.6 Domino Dual Cascode Voltage Switch Logic (DDCVSL).- 6.7 Chapter Summary.- References.- 7. Mtcmos Current-Steering Circuits.- 7.1 MOS Current Mode Logic: Overview.- 7.2 Introduction.- 7.3 Minimum Supply Voltage: First Constraint.- 7.4 Saturation Assurance: Second Constraint and the Proposed MTCMOS Design.- 7.5 A 2.5 Gbit/s 1:8 Demultiplexer in MTCMOS MCML.- 7.6 Impact of Using MTCMOS Technology Over MCML Parameters.- 7.7 Chapter Summary.- References.