Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition
2. Auflage 2016
ISBN: 978-1-4822-5435-8
Verlag: CRC Press

Buch, Englisch, 659 Seiten, Format (B × H): 183 mm x 260 mm, Gewicht: 1417 g

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Zielgruppe

Graduate students and researchers in the field of semiconductor materials. It will serve as a graduate-level textbook as well as a reference book for professionals in the field, including university faculty, post-doctoral researchers and personnel in government and industrial research and development laboratories. As a text, the book may be used in a graduate course on semiconductor heteroepitaxy, characterization of semiconductors, metamorphic semiconductor devices or another closely related topic.

Autoren/Hrsg.

Ayers, John E.

Kujofsa, Tedi

Rago, Paul

Raphael, Johanna

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

Über Autor(innen)

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.