Nonvolatile Memory and Selector Devices

Technology and Applications
1. Auflage 2026
ISBN: 978-3-527-35399-6
Verlag: Wiley-VCH GmbH

Buch, Englisch, 880 Seiten, Format (B × H): 170 mm x 244 mm

An introduction to foundational memory technology

Nonvolatile memory devices have become an ubiquitous component of consumer technology, appearing in products including smartphones, tablets and notebooks, and many more. They enable the high-speed permanent storage and readout of data with high reliability and low energy consumption. The growing incorporation of emerging materials, such as phase-change and two-dimensional materials, promise to further improve these devices and increase their technological reach.

Nonvolatile Memory and Selector Devices offers a hands-on overview of these devices and their applications, with a focus on those employing novel materials. It strongly emphasizes so-called selectors, the nanostructures whose intricate design is the basis for all advanced memory devices. Its emphasis on practical tools makes it a must-have for engineers and researchers alike.

Nonvolatile Memory and Selector Devices readers will also find: - Devices with immediate potential for mass-fabrication using existing facilities
- An up-to-the-minute analysis of current and emerging research
- Chapters authored by high-profile researchers from academia and industry alike

Nonvolatile Memory and Selector Devices is ideal for all researchers and early-career professionals in research or development, looking to develop an understanding of this critical set of electronic components.

Autoren/Hrsg.

Banerjee, Writam

Fachgebiete

• Mathematik | Informatik EDV | Informatik Informatik Künstliche Intelligenz
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

PART I: INTRODUCTION TO NONVOLATILE MEMORY
Introduction
3-D NAND Flash memories: technological evolution and prospective applications
Reliability Challenges of NAND Flash Memory in Harsh Environments
Two-Dimensional Materials for Future Transistors
 
PART II: NONVOLATILE MEMORY BASED ON VARIOUS MECHANISMS
Phase-Change Memory
Magnetic Random Access Memory: Past, Present and Future
HfO2 in Ferroelectric Devices key physics and critical challenges
Hafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospect
Programmable Read-Only Memory (PROM)
NRAM: a disruptive carbon-nanotube nonvolatile resistance-change memory
Photonic Nonvolatile Memory
 
PART III: REDOX-BASED EMERGING NONVOLATILE MEMORY DEVICES
Conductive Bridge Random Access Memory (CBRAM) Devices - Materials, Filament Scaling, and Performance
OxRAM
Modeling and HRRAM
Two-dimensional (2D) Materials for Scalable Resistive Switching Devices
Reliability and Variability Analysis of Resistive Switching Memory Devices
Productization of ReRAM, from concept to market
 
PART IV: SELECTOR DEVICES, AND CHARACTERIZATION TECHNIQUES
Electrical characterization, modeling, and simulation of HfO2-based CRS devices
Switching Dynamics of Ag- and Cu-based Diffusive Memristors
Amorphous chalcogenide-based threshold switches for selector and memory applications
Strategies for the nanoscale characterization of volatile and nonvolatile filaments
 
PART V: APPLICATIONS OF EMERGING NONVOLATILE MEMORY DEVICES
Emerging Devices for Neuromorphic Sensing and Computing
Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications
Accelerating Algorithms using Emerging Nonvolatile Memory Subsystems for Edge Computing
Hardware Security using Emerging Nonvolatile Memories
Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond
Adapting Emerging NonVolatile Memristor Technology for RF Applications
 

Über Autor(innen)

Writam Banerjee, PhD, is currently affiliated with the Centre for Semiconductor Design and Technology (CSDT), Indian Institute of Technology Roorkee. He previously served as Principal Engineer in Technology Development for Emerging Nonvolatile Memories at GlobalFoundries, Dresden, Germany, beginning in 2021. Prior to his industry appointment, Dr. Banerjee held several academic positions over more than a decade and has authored over 100 peer-reviewed scientific publications.