Microwave High Power High Efficiency GaN Amplifiers for Communication

1. Auflage 2022
ISBN: 978-981-19-6265-3
Verlag: Springer Nature Singapore

Buch, Englisch, Band 955, 260 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 632 g

Reihe: Lecture Notes in Electrical Engineering

The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

Autoren/Hrsg.

Bera, Subhash Chandra

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik
• Technische Wissenschaften Energietechnik | Elektrotechnik Energietechnik & Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Chapter 1. Introduction.- Chapter 2. Semiconductor for Microwave High Power Amplifiers.- Chapter 3. Microwave Transistors.- Chapter 4. Microwave High Power Amplifiers.- Chapter 5. Class-A High Power Amplifiers.- Chapter 6. Class-B High Power Amplifiers.- Chapter 7. Class-F High Power Amplifiers.- Chapter 8. Class-J High Power Amplifiers.- Chapter 9. Thermal Design of GaN High Power Amplifiers.

Über Autor(innen)

Subhash Chandra Bera received his B. Sc. degree (with honours) in physics from Presidency College, Calcutta, and B. Tech. and M. Tech. degrees in Radio Physics and Electronics from the Institute of Radio Physics and Electronics, University of Calcutta. He also received a Ph.D. degree in microwave and antenna engineering from Gujarat University, India. Since 1994, he has been with the Space Applications Centre, Indian Space Research Organization (ISRO), Ahmedabad, India, where he has been involved in design and development activities of microwave circuits and systems for various INSAT & GSAT series of communication payload projects as well as GAGAN/IRNSS Navigation Payload projects. He has developed several state-of-the art microwave subsystems that are operational in various Indian national satellites. His research interests include microwave active circuits in general and solid-state power amplifiers, channel amplifiers, linearizers, limiters, attenuator and equalizers in particular for spacecraft use. Currently, he is Group Director of Satcom and Navigation Systems Group, Space Applications Centre (ISRO), Ahmedabad, and Associate Project Director of GSAT-24 and GSAT-31 communication payloads. He has authored a book titled “Microwave Active devices and Circuits for Communication” published from Springer in 2018. He has published about 50 research publications in international journals and presented numerous papers in national and international conferences and symposiums. He has also delivered invited talks in the field of microwave active devices and circuits at various workshops and symposiums. He has also been granted four patents.