Buch, Englisch, 900 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 449 g
Buch, Englisch, 900 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 449 g
ISBN: 978-0-443-27741-2
Verlag: Elsevier Science
Plasma Processing for Semiconductor Materials and Thin-Film Devices covers the state-of-the-art in plasma processing of thin films. The book focuses on fundamental plasma theory, plasma for advanced applications, advanced characterization techniques, plasma and performance in semiconductor devices, and plasma processing. Sections consider the fundamental physics of plasma then move to advanced applications in the processing of semiconductor materials and their relation to the performance of semiconductor thin film devices. Subsequently, the book investigates the adoption of plasma for advanced (including thin film) characterization methods, finally addressing emerging plasma technologies such as liquid plasma, cold atmospheric plasma, and advanced plasma techniques.
This book will be of interest to students, researchers, and practitioners in any field that utilizes plasma processing, since its chapters have been written by leading authorities from both academia and industry.
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Chemie Analytische Chemie
- Naturwissenschaften Physik Physik Allgemein
- Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Verfahrenstechnik, Chemieingenieurwesen
- Naturwissenschaften Physik Elektromagnetismus Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
Weitere Infos & Material
Section I: Background and introduction to plasma science
1. Plasma physics and applications
2. Plasma diagnostic theory and methods
3. Modelling of plasma chemistry
Section II: Plasma processing: Thin Film Deposition
4. Advanced physical vapor deposition (HiPIMS, etc)
5. Advanced chemical vapor deposition (PE-ALD, etc)
6. A review on plasma enhanced atomic layer deposition for advanced thin film deposition
7. Plasma Jet Deposition
8. Simulation of plasma model for metallic thin film deposition
Section III: Plasma processing: Surface modification of thin films
9. Surface functionalization of narrow bandgap semiconductors
10. Surface functionalization of Si, SiGe, and Ge semiconductors
11. Surface functionalization of wide bandgap semiconductors
12. Surface functionalization of ultra-wide bandgap semiconductors
13. Surface functionalization of advanced polymeric materials
14. Surface functionalization of metallic surface modification
Section IV: Thin film etching and other plasma-enabled processes
15. Low temperature plasma etching technology
16. Etching technology for narrow bandgap semiconductor
17. Etching technology for Si, SiGe, and Ge semiconductor
18. Etching technology for wide bandgap semiconductor
19. Etching technology for ultra-wide bandgap semiconductor
20. Advances of plasma atomic layer etching technology
21. Plasma dicing technology
Section V: Energy, sensor and environmental applications of liquid plasma processing
22. Synthesis of semiconductor nanomaterials for energy applications
23. Environmental sensors via liquid plasma processing
Section VI: Other advanced (thin film) plasma processing methods
24. Cold atmospheric plasma
25. Laser induced plasma
26. Plasma for 3D printing
27. Development of advanced plasma technology for semiconductor device thin film applications
28. Advances of plasma etching technology for 3D advanced packaging for high density memory devices
Section VII: Plasmas for advanced and thin film characterization techniques
29. Glow Discharge Mass Spectrometry (GD-MS)
30. Glow Discharge Optical Emission Spectroscopy (GD-OES)
31. Inductively Coupled Plasma Mass Spectrometry (ICP-MS)
32. Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES)
Section VIII: Plasma and performance of semiconductor thin film devices
33. Enhancement of device performance with plasma treatment
34. Plasma induced damages and material defects related to device performance
35. Plasma for wafer bonding




