Magnetic Memory

Erscheinungsjahr 2010
ISBN: 978-0-521-44964-9
Verlag: Cambridge University Press

Buch, Englisch, 208 Seiten, Format (B × H): 173 mm x 246 mm, Gewicht: 567 g

If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You’ll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You’ll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
• Learn the key information, from the physics of magnetism to the engineering design of memory, with this step-by-step practical guide
• Understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue
• Get invaluable problem-solving insights from real-world memory case studies

Autoren/Hrsg.

Tang, Denny D.

Lee, Yuan-Jen

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein Experimentalphysik
• Mathematik | Informatik EDV | Informatik Technische Informatik Externe Speicher & Peripheriegeräte
• Technische Wissenschaften Technik Allgemein Physik, Chemie für Ingenieure
• Naturwissenschaften Physik Elektromagnetismus Magnetismus
• Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten

Inhaltsverzeichnis

1. Basic magnetostatics
2. Magnetic films
3. Properties of patterned ferromagnetic film
4. Magnetoresistance effects and memory devices
5. Field-write mode MRAMs
6. Spin torque transfer MRAM
7. Applications of MTJ based technology
Appendices: A. Unit conversion table cgs vs. SI
B. Dimensions of magnetism
C. Physical constants
D. Normal (Gaussian) distribution and quantile plot
E. Weibull distribution
F. TDDB reliability test of thin film
G. Binomial distribution and Poisson distribution
H. Defect density
I. Fe, Co, Ni element chemistry parameters
J. Soft error, hard fail and design margin.

Über Autor(innen)

Lee, Yuan-Jen
Yuan-Jen Lee is a Senior Engineer at MagIC Technologies, Inc., where he develops advanced magnetic memory technology. He received his Ph.D. from the National Taiwan University in 2003, after which he worked for ITRI, Taiwan, developing toggle MRAM and spin-torque MRAM.

Tang, Denny D.
Denny D. Tang is Vice President of MagIC Technologies, Inc., and has over 30 years' experience in the semiconductor industry. After receiving his Ph.D. in Electrical Engineering from The University of Michigan in 1975, he spent 15 years at IBM T.J. Watson Research Center, Yorktown Heights, 11 years at IBM Almaden Research Center at San José and 6 years at Taiwan Semiconductor Manufacturing Company (TSMC). He is a Fellow of the IEEE, TSMC and the Industrial Technology Research Institute (ITRI).