Buch, Englisch, 598 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 931 g
Deep Submicron and Nano-Scale Technologies
Buch, Englisch, 598 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 931 g
ISBN: 978-1-4419-4224-1
Verlag: Springer US
This book includes discussion of silicon materials and electrical engineering properties as used in the design of analog components. Due to the author's background at Texas Instruments, the book will have an emphasis on newer process integration techniques and technology to help professional engineers in the field understand and develop electrical components.
Zielgruppe
Professional/practitioner
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime.- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors.- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects.- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications.- Parasitic effects.
