Group III Nitride Semiconductor Compounds

Physics and Applications
Erscheinungsjahr 1998
ISBN: 978-0-19-850159-6
Verlag: Oxford University Press

Buch, Englisch, 492 Seiten, Print PDF, Format (B × H): 163 mm x 242 mm, Gewicht: 963 g

This book was motivated in large part by the tremendous interest shown in nitride semiconductors by the scientific community in recent years. The interest is due to the wide range of commercially viable industrial applications such as visible and ultraviolet optoelectronics. The aim of this book is to elucidate the physics of nitride-based materials and related devices, and to provide to graduate students and young researchers a rapid introduction to this burgeoning field. Chapters of tutorial style are of medium length, and have been commissioned from some of the very best experts on each topic, both from academia and from industry. All aspects arising from the dual challenges of achieving high-quality, single crystal material and engineering optoelectronic devices are addressed. In the first chapters, the reader will learn about the nitrides in the context of other semiconductors, and will be exposed to the methods used to grow these materials. The chapters which follow discuss the materials' performance from the point of view of electronic transport, optical and structural properties. Finally, an extensive review of device applications is provided in the area of modern transistors, ultraviolet detectors and light emitters.

Autoren/Hrsg.

Gil, Bernard

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Naturwissenschaften Physik Quantenphysik Atom- und Molekülphysik
• Naturwissenschaften Physik Elektromagnetismus Magnetismus
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Metallische Werkstoffe
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Mechanik Klassische Mechanik, Newtonsche Mechanik
• Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Metallurgie

Inhaltsverzeichnis

- 1: Beyond silicon: the rise of compound semiconductors

- 2: Deposition and properties of III-nitrides by molecular beam epitaxy

- 3: MOVPE growth of nitrides

- 4: Structural defects and materials performance of the III-V nitrides

- 5: Modulation spectroscopy of the group III nitrides

- 6: Optical properties and lasing in GaN

- 7: Defect spectroscopy in the nitrides

- 8: Electronic and optical properties of GaN based quantum wells

- 9: Transistors and detectors based on GaN related materials

- 10: III-V nitride based short-wavelength LEDs and LDs

- 11: Cubic group III nitrides

Über Autor(innen)

Bernard Gil, Directeur de Recherche au CNRS, Centre National de la Recherche Scientifique, Groupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case courrier 074, F-34095 Montpellier Cedex 5, France, Tel:[phone], Fax:[phone], email: [e-mail] (address details of contributors attached)