III-Nitride Semiconductors and their Modern Devices

Erscheinungsjahr 2013
ISBN: 978-0-19-968172-3
Verlag: Oxford University Press

Buch, Englisch, 662 Seiten, Format (B × H): 166 mm x 234 mm, Gewicht: 1288 g

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters.

All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.

Autoren/Hrsg.

Gil, Bernard

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

- 1: Hiroshi Amano: Development of the nitride-based UV/DUV LEDs

- 2: Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski: The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays

- 3: Armin Dadgar and Alois Krost: Epitaxial growth and benefits of GaN on silicon

- 4: Ronny Kirste and Zlatko Sitar: The growth of bulk aluminum nitride

- 5: Andre Strittmatter: Epitaxial growth of nitride quantum dots

- 6: Raphaël Butté, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-François Carlin, and Nicolas Grandjean: Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics

- 7: Hideto Miyake: Growth and optical properties of aluminum rich AlGaN heterostructures

- 8: Michael Kneissl and Tim Wernicke: Optical and structural properties of InGaN light emitters on non- and semipolar GaN

- 9: Rudeesun Songmuang and Eva Monroy: GaN-based single-nanowire devices

- 10: Jean Yves Duboz: Advanced photonic and nanophotonic devices

- 11: Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomás Palacios: Nitride-based electron devices for high power / high frequency applications

- 12: Maria Tchernycheva and François Julien: Intersubband transitions in low dimensional nitrides

- 13: Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius, and Bernard Gil: The slow light in gallium nitride

- 14: Csilla Gergely: Nitride devices and their biofunctionalization for biosensing applications

- 15: Walter R. L. Lambrecht and Atchara Punya: Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides

- 16: O. Kyriienko, I.A. Shelykh, and Alexey V. Kavokin: Terahertz emission in polaritonic systems with nitrides

Über Autor(innen)

Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.