May 16

Nachdruck 2021
ISBN: 978-3-11-249989-4
Verlag: De Gruyter

Buch, Englisch, Band Volume 17, Number 1, 484 Seiten, Format (B × H): 160 mm x 236 mm, Gewicht: 868 g

Reihe: Physica status solidi / A.

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Autoren/Hrsg.

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Inhaltsverzeichnis

Frontmatter -- Classification Scheme -- Author Index -- Contents -- Review Article -- Photoelectric Phenomena in Amorphous Chalcogenide Semiconductors -- Original Papers -- Virtual Recharge: Mechanism of Radiationless Transition in Scheelite and Fergusonite Type Crystals Doped with Rare-Earth Ions -- Coupling Energy Dependence of Spectral Properties in Weak Superconducting Contacts -- Dielectric Properties of Ba(ClO3)2 • H2O Single Crystal -- Antiphase Domain Boundaries in Pd3Mn -- Measurements of the Physical Properties of Thin Bi Films from 180 to 40000 A -- Cross Slip of Superlattice Dislocations -- A Study of the Oxidation and Reduction by Water Vapour of Si (111) Surfaces Using Auger Electron Emission -- Thermochemical Calculations of the System AsH3-PH3-HCl-Ga-H2 for GaAsP Yapour Growth -- Possible Tunneling in Ferromagnetics with Extraordinary Viscosity -- Threshold Theory of Laser Generation in p-n Junctions with Exponential Band Tails -- The Elastic Constants of MnAs -- Dissipated Energy during Cyclic Deformation -- On the Influence of Donor-Acceptor Interaction upon Recombination and Electrical Instability in Semi-Insulating GaAs (Cr) -- Neutron Diffraction Effect on the Rocking Curve of a Vibrating Single Crystal -- Direct Observation of Extended Linear Defects in MgF2-Doped Niobium Oxides -- Magnetic Properties of Liquid-Phase Epitaxial Films of Y3-xCdxFe5-yGayO12 for Optical Memory Applications -- Growth and Optical Absorption Spectra of the Layer-Type Trichalcogenides ZrS3 and HfS3 -- Photoelectric Properties of Silver Bromide-Semiconductor Structures -- Structures magnétiques sinusoïdales et hélicoïdales de la terre rare dans TMn2O5 -- Calculation of the Atomic Volumes of Fe-Ni and Fe-Co Alloys -- Field Effect on the Germanium-Electrolyte Interface -- Low Temperature Thermal Conductivity of Zinc Oxide -- Thermally Stimulated Discharge Current Studies in Shellac Wax Electrets -- Dissociated Dislocations in Germanium -- X-Ray Observations of Induced Dislocations at Simple Planar Structures in Silicon -- Oxygen Adsorption on the (111) Face of Silver -- On the Determination of the Carrier Concentration of GaAs1-xPx -- Dislocation Dynamics in LiF and MgO Single Crystals -- The Epitaxial Growth and Structure of Films of CdTe Evaporated onto Ge -- Stresses of Hexagonal Screw Dislocation Arrays (III) -- Magnetic Relaxation in Neutron-Irradiated Iron -- Migration of Sr2+ Impurity-Vacancy Dipoles in RbCl -- Point Defects in Highly Deformed Yanadium -- A Mössbauer Study of the Hyperfine Interactions in Intermetallic, Ferromagnetic, and Ferroelectric Compounds of Antimony -- Size of Subgrains Arising in Single Crystals Grown from the Melt and Dimensions of Dislocation Cells in Deformed Crystalline Materials -- Silicon Homoepitaxy with Ion Sputtering (I) -- Surface Luminescence in GaAs at Laser Excitation -- Precision Lattice Parameter Studies of Ion-Implanted Silicon -- Short Notes -- A Dislocation "Etch-Memory" Effect in Gallium Arsenide -- Heterodiodes of ZnTe Thin Films on GaAs, InAs, and GaP Single Crystals Prepared by Vacuum-Deposition Epitaxy -- A Modified Method of Limited X-Ray Topographs -- Photovoltaic Properties of ZnS Crystals -- Analysis of Interaction between a Magnetic Saturated Overlay and a Magnetic Bubble -- Low Frequency Vibrations in Lepidocrocite (y-FeOOH) Studied by Infrared Absorption -- Piezoresistive Coefficients in Silicon Diffused Layers -- Uber die Rolle der F- und F'-Zentren in der Exoemission von BeO -- On the Threshold Law for the Photoemission from the Organic Solid -- Spectroscopic Properties of La2Be2O5:Nd3+ Single Crystals -- Colour Centres in YAlO3:Tr3+ Crystals -- Experimental Test of Sv = 4 kT(U/I) for Space-Charge-Limited Current of Holes in Silicon -- On the Calculation of the Limiting Thickness of a Stable Coherent Two-Dimensional Epitaxial Layer -- The Dependence of Raman Scattering Cross Section on Laser Intensity for Semiconducting NaxWO3 Crystals -- Study of Electrical Con