High-Efficiency RF Power Amplifiers and Oscillators

Innovative Engineering Design Approaches
1. Auflage 2026
ISBN: 978-1-394-37438-0
Verlag: Wiley

Buch, Englisch, 480 Seiten, Format (B × H): 155 mm x 231 mm, Gewicht: 816 g

Explore creative RF design through innovative engineering and practical examples

High-Efficiency RF Power Amplifiers and Oscillators: Innovative Engineering Design Approaches offers original and up-to-date guidance for designing high-efficiency RF and microwave circuits. Written by Andrei Grebennikov, a consultant with extensive RF circuit design experience, this guide emphasizes novel theoretical approaches and practical examples while minimizing mathematical complexity for readers of varying technical ability.

The book covers active device modeling including MOSFETs, GaN HEMTs, and HBTs, progressing through impedance matching techniques. It explores Class-F, inverse Class-F, and Class-E amplifier designs with detailed load networks and implementation examples. Coverage extends to high-efficiency oscillators, advanced Doherty architectures for base stations and MIMO applications, and mixed-mode enhancement techniques including envelope tracking for cellular systems.

Readers will also find: - Comprehensive active device modeling for MOSFETs, LDMOSFETs, GaN HEMTs, and HBTs with practical equivalent circuits and characterization methods
- Detailed impedance matching using lumped elements and transmission lines, including broadband techniques and lossy match design approaches
- Complete treatment of Class-F, inverse Class-F, and Class-E designs with optimum load network parameters and transmission-line implementations
- Advanced Doherty amplifier architectures including asymmetric, multistage, and inverted configurations with integration techniques for MIMO applications
- Practical design examples including MMIC HBT power amplifiers, GaN HEMT implementations, and oscillators for wireless power transfer

Essential for graduates, researchers, circuit designers, and engineers in RF and microwave engineering, High-Efficiency RF Power Amplifiers and Oscillators provides the practical tools and theoretical foundation needed to develop cutting-edge wireless communication circuits through creative design approaches that balance innovation with proven engineering principles.

Autoren/Hrsg.

Grebennikov, Andrei

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik

Inhaltsverzeichnis

About the Author ix
Preface xi
Acknowledgment xv

1 Active Devices and Modeling 1
1.1 MOSFET Device Modeling 1
1.2 LDMOSFETs 4
1.3 Equivalent Circuits Characterizing Device Input and Output Impedances 23
1.4 GaAs MESFETs and GaN HEMTs 25
1.5 BJTs and HBTs 32

2 Impedance Matching 51
2.1 Conjugate-matching Condition 51
2.2 Matching with Lumped Elements 55
2.3 Matching with Transmission Lines 73
2.4 Lossy Match Design Technique 93
2.5 Broadband Matching with Prescribed Amplitude-frequency Response 97

3 High-efficiency Power Amplifier Design 107
3.1 Class-F Circuit Design 107
3.2 Inverse Class F 131
3.3 Class E with Shunt Capacitance 155
3.4 Parallel-circuit Class E 174
3.5 Class E with Shunt Capacitance and Shunt Filter 197Contents vii
3.6 Summary: Magic of Parallel Circuits 208
3.7 Summary: Comparison of Output Impedances and Load-network Parameters 211
3.8 Design Example: Two-stage High-efficiency 1.75-GHz MMIC HBT Power Amplifier Using Parallel-circuit Class-E Mode 213
3.9 Broadband Class-E Power Amplifiers 226

4 High-efficiency Oscillator Design 249
4.1 Oscillator Basic Structures 250
4.2 Empirical Optimum Design Approach 256
4.3 Analytic Optimum Design Approach 260
4.4 High-efficiency Design Technique 268
4.5 Class-E Power Oscillators for WPT Systems 290
4.6 Design Example: Parallel-circuit Class-E Oscillator for Compact Fluorescent Lamps 295

5 High-efficiency Doherty Amplifiers 305
5.1 Conventional Doherty Architecture 306
5.2 Asymmetric Doherty Amplifiers 315
5.3 Multistage Doherty Amplifiers 322
5.4 Inverted Doherty Amplifiers 331
5.5 Three-way Doherty Amplifier with Enhanced Backoff Region 335
5.6 Integrated and Monolithic Doherty Amplifiers 338
5.7 Multiband and Broadband Capability 355
5.8 Design Example: High-power 3.4–3.8 GHz Asymmetric Inverted GaN HEMT Doherty Amplifier for Base Station Applications 371
5.9 Design Examples: Integrated Sub-6-GHz Two-stage GaN HEMT Doherty Amplifiers for Massive-MIMO Applications 379

6 Mixed-mode and Alternative Efficiency Enhancement Techniques 395
6.1 Class-FE Power Amplifiers 395
6.2 Class-E/F3 Power Amplifiers 407
6.3 Class-E/F3 Oscillators 426
6.4 Switched-path and Load-modulated Balanced Power Amplifiers 428
6.5 Three-way Doherty Amplifier with Three-coupled-line Combiner 437
6.6 Envelope Tracking for Cellphone Applications 442

References 446
Index 451

Über Autor(innen)

Andrei Grebennikov, PhD, received his Dipl. Eng. degree in radio electronics from the Moscow Institute of Physics and Technology and his Ph.D. in radio engineering from Moscow Technical University of Communications and Informatics. He is an author and coauthor of more than 100 papers, holds 30 European and US patents, and has written 10 books dedicated to RF and microwave circuit design. He has lectured as a Guest Professor at the University of Linz.