Optoelectronic Devices: III Nitrides

Erscheinungsjahr 2005
ISBN: 978-0-08-044426-0
Verlag: Elsevier Science

Buch, Englisch, 592 Seiten, Format (B × H): 175 mm x 248 mm, Gewicht: 1202 g

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.

The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.

This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.

Zielgruppe

Academic and industrial researchers in semiconductors and micro-electronics.

Autoren/Hrsg.

Henini, Mohamed

Razeghi, M.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Über Autor(innen)

Henini, Mohamed
Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.