Electromigration in Metals

Fundamentals to Nano-Interconnects
Erscheinungsjahr 2022
ISBN: 978-1-107-03238-5
Verlag: Cambridge University Press

Buch, Englisch, 400 Seiten, Format (B × H): 175 mm x 251 mm, Gewicht: 953 g

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

Autoren/Hrsg.

Ho, Paul S

Hu, Chao-Kun

Gall, Martin

Sukharev, Valeriy

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
• Technische Wissenschaften Technik Allgemein Nanotechnologie

Inhaltsverzeichnis

1. Introduction to electromigration; 2. Fundamentals of electromigration; 3. Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects; 4. Stress evolution and damage formation in confined metal lines under electric stressing; 5. Electromigration in Cu interconnect structures; 6. Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects; Analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure; 8. Massive scale statistical studies for electromigration; 9. Assessment of electromigration damage in large on-chip power grids. Index.

Über Autor(innen)

Hu, Chao-Kun
Chao-Kun Hu has recently retired as a Research Staff Member in the Reliability Department at the T.J. Watson Research Center of IBM. He received IBM Corporate awards, IEEE Cledo Brunetti award, EDS Recognition and IITC Best Paper awards, and Invention of the Year NY Intellectual Property Law Association.

Gall, Martin
Martin Gall is the director of the U.S. Operations Reliability Engineering Department at GLOBALFOUNDRIES Inc. He is an IEEE TDMR editor and the recipient of an IEEE IITC Best Paper and SRC Mentor of the Year Award.

Ho, Paul S
Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society, IEEE, IITC and Semiconductor Industry Association, among others.

Sukharev, Valeriy
Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA, Siemens Digital Industries Software. He was a recipient of the 2014 and 2018 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best Paper awards from ICCAD 2016, 2019 and 2020.