Medienkombination, Englisch, Band 41A2b, 334 Seiten, mit 1 CD-ROM, Format (B × H): 193 mm x 270 mm, Gewicht: 1200 g
Supplement to Vol. III/22b (Print Version), Revised and Updated Edition of Vol. III/22b (CD-ROM)
Medienkombination, Englisch, Band 41A2b, 334 Seiten, mit 1 CD-ROM, Format (B × H): 193 mm x 270 mm, Gewicht: 1200 g
ISBN: 978-3-540-43086-5
Verlag: Springer
Vols. III/17a-i and III/22a,b(supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today´s scientists and to offer a complete overview on semiconductor data, volume III/41 provides all data available so far. They will be published in the following way: a series of eight subvolumes cover only the supplementary data to vols.III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Naturwissenschaften Physik Physik Allgemein Geschichte der Physik
- Naturwissenschaften Physik Physik Allgemein Experimentalphysik
- Naturwissenschaften Physik Physik Allgemein Theoretische Physik, Mathematische Physik, Computerphysik
Weitere Infos & Material
Properties of impurities and defects in group IV-IV and III-V compounds (impurities, defects, solubility, segregation and distribution coefficients, impurity levels, excited bound states of acceptros and donors, photoluminescence properties, vibrational modes, capture and photoionization cross-sections, etc.)
