III-Nitride Semiconductors

1. Auflage 2002
ISBN: 978-1-56032-972-5
Verlag: CRC Press

Buch, Englisch, Band 13, 464 Seiten, Format (B × H): 152 mm x 233 mm, Gewicht: 694 g

Reihe: Optoelectronic Properties of Semiconductors and Superlattices

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.

Autoren/Hrsg.

Jiang, Hongxing

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Naturwissenschaften Physik Elektromagnetismus Magnetismus

Inhaltsverzeichnis

Introduction
Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides
Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN
Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures
Chapter Four: Optical Properties of Homeopitaxial GaN
Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells
Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering
Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds
Chapter Eight: Light Emission from Rare Earth Doped GaN

Über Autor(innen)

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.
Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Properties of Semiconductors and Superlattices.