III-Nitride Semiconductors

1. Auflage 2002
ISBN: 978-1-56032-973-2
Verlag: CRC Press

Buch, Englisch, 422 Seiten, Format (B × H): 152 mm x 281 mm, Gewicht: 685 g

This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.

Zielgruppe

Academic, Postgraduate, and Undergraduate

Autoren/Hrsg.

Jiang, Hongxing

Fachgebiete

• Technische Wissenschaften Technik Allgemein Technik: Allgemeines

Inhaltsverzeichnis

Chapter One: Optical Spectroscopy of Highly Excited Group III-Nitrides
Chapter Two: Optical Constraints of III-Nitrides-Experiments
Chapter Three: Optical Functions of III-Nitrides-Calculations
Chapter Four: Interband Optical Transitions in Piezo-Strained InGaN Qunatum Wells
Chapter Five: Electric Fields in Polarized InGaN/GaN Heterostructures
Chapter Six: Inter-link Between Structural and Optical Properties of GaN and GaN/AIGaN Heterostructures
Chapter Seven: LO Phonon Assisted Excition Luminescence Processes in Heteroepitaxial GaN Films
Chapter Eight: Cubic Phase GaN and AIGaN: Expitaxial Growth and Optical Properties

Über Autor(innen)

Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.
Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor of the Optoelectronic Properties of Semiconductors and Superlattices series.