Chemical Processing of Dielectrics, Insulators and Electronic Ceramics

Volume 606
Erscheinungsjahr 2012
ISBN: 978-1-107-41320-7
Verlag: Cambridge University Press

Buch, Englisch, 328 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 477 g

Reihe: MRS Proceedings

This book focuses on the creative use of chemistry in the fabrication of a variety of oxide and non-oxide materials which are likely to play a crucial role in the development of the next generation of microelectronics devices. It includes inorganic precursor chemistry, gas-phase and solid-state chemistry, materials science, chemical physics and chemical engineering. Highlights include the deposition of high-k dielectric gate oxides, ferroelectric oxide films for infrared and memory applications, low-k dielectrics, TiN and TaN diffusion barriers, and fresh precursors for III-V nitrides. The emphasis is on chemical methods for the controlled deposition of thin films, for which chemical vapor deposition (CVD) has proven to be a useful and versatile technique. Of particular interest is the use of liquid-injection MOCVD for the deposition of oxide multilayers and superlattices. Solution deposition techniques such as sol-gel, metalorganic decomposition (MOD), hydrothermal processing are also prominently featured. Topics include: CVD of oxide ceramics; CVD of nonoxide ceramics; solution deposition of electronic ceramics; alternative chemical processing methods and characterization of electronic ceramics.

Autoren/Hrsg.

Jones, Anthony C.

Veteran, Janice

Mullin, Donald

Cooper, Reid

Kaushal, Sanjeev