Buch, Englisch, 98 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 310 g
Buch, Englisch, 98 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 310 g
ISBN: 978-3-0364-2124-7
Verlag: Trans Tech Publications
This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Preface
Growth of 8-Inch SiC Single Crystals with Low Basal Plane Dislocation Density
300 mm 4H-SiC Crystal and Substrate Development
Epitaxial Growth and Characterization of 4H-SiC Layer on C-Face and Si-Face Substrates
Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers
Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
Solution Growth Technique of Silicon Carbide with In Situ Observation
Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal
Growth and Characterization of “IsoPure” Epitaxial Layers for Quantum Applications
Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways
Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
