Buch, Englisch, 112 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 330 g
Buch, Englisch, 112 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 330 g
ISBN: 978-3-0364-2125-4
Verlag: Trans Tech Publications
This special edition is devoted to the identification, characterisation, and understanding of the effects of structural critical imperfections of silicon carbide during bulk crystal growth and epitaxial deposition. Emphasis is placed on advanced analytical techniques that provide essential insight into the origin, distribution, and evolution of defects, enabling continuous improvement in crystal growth processes and epitaxial technologies. The publication aims to provide researchers and engineers with a deeper understanding of defect formation and characterisation, which is fundamental to achieving the material perfection required for the creation of reliable and efficient SiC-based electronic devices.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Preface
The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC
Formation Mechanism and Reduction of Surface Pits on 4H-SiC Epitaxial Layer
Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay
DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters
Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates
DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes
Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices
Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers
Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography
High Quality P-Type 4H-SiC Growth by PVT Method
Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC
Observation and Analysis of the “Galaxy” Defect in 4H-SiC through X-Ray Synchrotron Topography
Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices
Silicon Carbide Epitaxial Defects and Substrate Defects Analysis by Dynamic Photoluminescence and X-Ray Topography
Unveiling the Role of Crystallographic Defects in SiC Device Reliability with Multi Modal Structural Analysis
