Design of SiC Power Devices

Erscheinungsjahr 2026
ISBN: 978-3-0364-2131-5
Verlag: Trans Tech Publications

Buch, Englisch, 110 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 330 g

The presented special edition considers the principles, methodologies, and innovative approaches that underpin the practice of developing advanced SiC-based power semiconductor structures. This edition explores concepts for a broad range of devices based on SiC MOSFETs, and it's intended for researchers, engineers, and graduate students in power electronics development and design.

Autoren/Hrsg.

Koo, Sang Mo

Shin, Hoon Kyu

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Preface
Calculation of the Whole Interface State Density Profile in SiO2/SiC Lateral MOSFETs
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
Design of the Robust Edge Termination Applied to 4.5 kV SiC SBD Embedded MOSFET against Humidity
JTE-Based Termination Design and Technology Considerations for 1500 V 4H-SiC Superjunction MOSFETs
2x Current Boosting Scheme in 3300 v 4H-SiC VDMOSFET
Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
Benchmark Study of State-of-the-Art Commercial 1200V SiC MOSFETs for Automotive Applications
Study of SiC Thyristors with Integrated Temperature Sensors