Buch, Englisch, 100 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
Buch, Englisch, 100 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
ISBN: 978-3-0364-2127-8
Verlag: Trans Tech Publications
This special edition brings together fundamental and applied aspects of semiconductor materials science with advanced device fabrication and characteristics evaluation techniques. By harmoniously integrating recent advances from materials science, semiconductor physics, and electronic engineering, this book is intended to serve as a valuable resource for researchers, engineers, and graduate students working in wide-bandgap semiconductors and power device technology.
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Werkstoffprüfung
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Preface
Comparison of the Irradiation Temperature Effect of on the Carrier Removal Rates in GaN and SiC
Investigation of Mechanical Stress and Warpage in 200 mm Silicon Carbide Wafers: Implications for Production Scalability
Challenges in Measuring Thin SiO2 Layers on 4H-SiC via Spectroscopic Ellipsometry
A Frequency-EBIC Technique for High Spatial Resolution of the Effective Minority Charge Carrier Lifetime in SiC PN-Junctions
Evaluation of Oxide Processing Steps in SiC Technology Using Contactless Corona-Based CV Measurements
Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current
A Study on Simplifying the Process of a Single Cycle for Multiple Epitaxy and Implantation Method to Fabricate SiC Super Junction
Effects of 673K Temperature Anneal on a 4H-SiC CMOS NOT Logic Gate
Edge Termination Design for Ultra High-Voltage (>10 kV) 4H-SiC Power Devices Using Background Doping Modulation (BDM)
Carbon Vacancy Engineering on High-Temperature Annealing as a Cost-Effective Approach for Reverse Recovery Suppression in SiC-MOSFETs
4H-SiC Diodes to Probe Stark Effect Detection in 7Be Decay Lifetime
Enhanced Breakdown Voltage and Enlarged Process Window for Junction Termination Extension in SiC Power Devices Using Hybrid Random and Channeling Implantation
Effect of Varying N+ Source Implantation Depth on the Electrical Characteristics of 1.2 kV 4H-SiC MOSFETs
