Buch, Englisch, 142 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 380 g
Buch, Englisch, 142 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 380 g
ISBN: 978-3-0364-2130-8
Verlag: Trans Tech Publications
This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.
Autoren/Hrsg.
Weitere Infos & Material
Preface
Study of Interface Traps and Scattering Mechanisms in the 4H-SiC MOS Channel Using Gated Hall Measurements
Gate Leakage Imaging of Silicon Carbide Power MOSFETs under Negative-Bias Gate Stress
Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and Its Relation with Transconductance
Insight into Bias-Temperature Instability of SiC MOSFETs Using Charge Pumping and Triple-Sense Threshold Measurements
Experimental Analysis of 4H-SiC CMOS NOT Logic Gate Down to 100K
Characterization of 4H-SiC Lateral MOSFETs up to 773 K
Application of a New Method and Criterion for Analyzing Repetitive Surge Current in Commercial SiC Schottky Diodes
Short-Circuit Reliability Analysis of SG-MOSFETs vs Planar 4H-SiC MOSFETs
Impact of Active Cell Geometry on the Static Performance of 10-kV 4H-SiC JBS (Junction Barrier Schottky) Diodes
Fowler-Nordheim Current at Negative Gate Bias in SiC MOSFETs
Body Diode Reliability and Reverse Recovery Characteristics of Short Tapered SJ-MOSFET Fabricated by MeV Al Ion Implantation
Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
Body Diode Performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
An Improved Analytical Model for SiC P-I-N Diode Reverse Recovery
Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
Dynamic Conduction Behavior of SiC-MOSFETs in the Sub-Threshold Regime and the Impact of Deep Oxide Traps to the Channel Depletion
Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET
