Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules

Erscheinungsjahr 2026
ISBN: 978-3-0364-2133-9
Verlag: Trans Tech Publications

Buch, Englisch, 160 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 410 g

This special edition is devoted to the research on the durability and long-term performance of SiC-based power components and modules under various operating conditions and is intended for researchers, engineers and graduate students engaged in the development of advanced wide-bandgap power electronics.

Autoren/Hrsg.

Koo, Sang Mo

Shin, Hoon Kyu

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Preface
Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
Temperature Dependence of the AC-BTI in SiC MOSFETs
Reliability Challenges of SiC MOSFETs under Continuous Dual-Bias Stress in EV Applications
Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs
Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors
Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations
Effects of Dynamic Reverse Bias Stress on the Blocking Capability of SiC MOSFETs
Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Processing and Screening
Cumulative Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs after Bipolar Gate Switching Stress
Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test
Design Space Exploration of SiC Power Module Package via Surrogate Model
Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
Resonance Damping Optimization in 1200V Power Modules with Planar SiC MOSFET Devices for 200 kW Output
Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
Low-Inductance Packaging Design for SiC Power MOSFET Modules