Buch, Englisch, 104 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
Buch, Englisch, 104 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
ISBN: 978-3-0364-2132-2
Verlag: Trans Tech Publications
This special edition explores the broad spectrum of phenomena that govern the functionality, performance, and reliability of SiC-based devices under demanding exploitation conditions and quantum applications. The presented research results will serve as a valuable resource for researchers, engineers, and graduate students working at the intersection of wide-bandgap semiconductors, quantum technologies, and radiation-hardened electronics.
Autoren/Hrsg.
Weitere Infos & Material
Preface
Design and Characterization of an ODMR System for NV-Based Quantum Sensing
Towards a Fully Integrated 4H-SiC A-Plane Quantum-Chip – Transistors and Light Emitters
Scalable Fabrication and Electrical Characterization of Lateral Pin-Diodes on 4H-SiC A-Plane Wafers for Functionalization of Silicon Vacancies
4H-SiC Tunneling Light Emitter as a Light-Source for Quantum Applications
A Simulation Study of Electronic Device Designs for the Control of SiC Color Centers as Spin Qubits
Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs under Heavy-Ion Irradiation
Channel Length Effects on Threshold Voltage Instability in Gamma Irradiated 4H-SiC PMOSFETs
High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Irradiation and High Drain Voltage Bias
Isolation of Cumulative Heavy-Ion Induced Trench Degradation Effects within a Commercial 4H-SiC Double Trench MOSFET
In Situ Measurement of the Gain Stage of a SiC JFET Operational Amplifier under Gamma Ray Irradiation
1200V Lateral SiC Schottky Diode Radiation Hardness Enhancement
