Buch, Englisch, 106 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
Buch, Englisch, 106 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
ISBN: 978-3-0364-2126-1
Verlag: Trans Tech Publications
The special edition focuses on the investigation of the various stacking faults found in SiC polytypes, analysing their crystallographic nature, formation mechanisms, characterisation methods, and their influence on device properties. By deepening understanding of the conditions that promote the development of these defects, researchers and engineers can improve the quality of SiC substrates and epitaxial layers, supporting the continued advancement and modernisation of related technologies. The presented edition will be helpful for a wide range of specialists in the semiconductor industry.
Autoren/Hrsg.
Weitere Infos & Material
Preface
Proton Implantation–Induced Reduction of SSF Width and Associated Adverse Effects in 4H-SiC Epitaxial Layers
Investigation on Bipolar Degradation Caused by In-Grown Stacking Fault in 3.3kV SiC-MOSFET
Process-Dependent Photoluminescence Behavior Evolution of Stacking Faults in 4H-SiC
Trial Implementation of Operando PL Spectrum Mapping Using a Mini-Spectrometer in EVC Screening of 4H-SiC Wafers
Quantitative Analysis of Excess Minority Carrier Density and Critical Duration in UV Irradiation-Based Screening for Bipolar Degradation in 4H-SiC
Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
Exploring the Ion Implantation Mechanism for Suppressing Stacking Fault Expansion in 4H-SiC: A Fundamental Approach
Investigation of Spoke Pattern of Stacking Faults in 4H-SiC Wafers Grown by Physical Vapor Transport Method
Micropipes in SiC Die Observed by Molten KOH Etching
Synchrotron X-Ray Topography Analysis of Low Angle Grain Boundaries Induced by Growth Step Flow in PVT-Grown 4H-SiC Crystals
Polytype Transitions in Silicon Carbide: A Macroscopic View
Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
