Buch, Englisch, 100 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
Buch, Englisch, 100 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
ISBN: 978-3-0364-2128-5
Verlag: Trans Tech Publications
This special edition focuses on scientific principles and the technologies that underpin the preparation and processing of SiC wafers. The technological operations involved in transforming a bulk SiC crystal into a device-ready substrate are described. The presented information will contribute to continued advances in manufacturing and the development of the next generation of high-performance electronic devices.
Autoren/Hrsg.
Weitere Infos & Material
Preface
Comparative Study on Grinding Behavior of C-Face and Si-Face in Laser-Sliced 4H-SiC Wafers
Effects of Processing Passes on Laser-Sliced SiC
Feasibility Study of SiC Wafer Reutilization Process through Laser Splitting and Bonding Techniques
Impacts of Wafer Thinning Process Using Laser Slice Technique on Silicon Carbide Device Characteristics
A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-Based Devices
Damage-Free Dicing of SiC Substrate Using High-Pressure SF6 Plasma: The Time Dependence of Processed Groove Profiles
Correlation Study of Physical and Optical Total Thickness Variation in 4H-SiC Substrates
Impact of Ambient Conditions on Oxide Thickness Distribution on 4H-SiC in Thermal Oxidation Furnace
Strain Relief of Silicon Carbide Substrates(4H-SiC) by Wet Etching
CMOS-Compatible Pore Nucleation on 4H-SiC Si-Face via Reactive Ion Etching for Homogeneous Electrochemical Etching
BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser
Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer
