Nanoelectronics Technology and Applications

Erscheinungsjahr 2027
ISBN: 978-981-9208-30-2
Verlag: Springer

Buch, Englisch, Format (B × H): 155 mm x 235 mm

Reihe: Springer Tracts in Electrical and Electronics Engineering

The book explores the emerging field of nanoelectronics technology and its applications, with a focus on advanced semiconductor materials, devices, and circuits essential for VLSI design in IoT applications. It covers both two-terminal and multi-terminal devices, emphasizing their simulation, modeling, fabrication, and characterization. This book includes key topics such as novel material systems, band engineering, and modern fabrication techniques. This book serves as a valuable resource for Ph.D., postgraduate, and undergraduate students engaged in nanoelectronics research. It is also suitable as a textbook for elective courses in Electronics and Communication Engineering and Electrical Engineering at universities worldwide.

Zielgruppe

Research

Autoren/Hrsg.

Lenka, Trupti Ranjan

Nguyen, Hieu Pham Trung

Fachgebiete

• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik

Inhaltsverzeichnis

Chapter 1. AlGaN/GaN HEMT Design, Fabrication and Characterization.- Chapter 2. III-Nitride Nanowire Ultra-Violet LED for Enhanced Luminesce.- Chapter 3. Development of integrated III-nitride optoelectronic devices for sensing applications.- Chapter 4. Ga2O3 based HEMT for RF and high-power Nanoelectronics Applications.- Chapter 5. SiGe Source-based epitaxial layer encapsulated TFET and its application as a resistive load inverter.- Chapter 6. InAs Raised Buried Oxide SOI-TFET with n-type Si1-xGex Pocketfor Low Power Applications.- Chapter 7 Vertical AlGaN/GaN HEMT for Power Electronics Application.- Chapter 8. Modelling of MOSFET for Low Power Nanoelectronics.- Chapter 9. Challenges and Opportunities of Silicon TFET.- Chapter 10. GaN HEMT Modeling for High Frequency Applications.- Chapter 11. TFET Design and Modelling and Low-Power VLSI.- Chapter 12. Gate Leakage Modelling of AlGaN/GaN MOS-HEMT.- Chapter 13. Reliability Analysis of AlGaN/GaN MOS-HEMT.- Chapter 14. Design of GaN HEMT based Low Noise Amplifier for RF-Front EndDesign.- Etc.

Über Autor(innen)

Trupti Ranjan Lenka is an Associate Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology (NIT) Silchar, India, with 21 years of experience in academic research on electronic devices. He earned his Ph.D. in Microelectronics Engineering from Sambalpur University, Odisha, in 2012, an M.Tech. in VLSI Design in 2007, and a B.E. in Electronics and Communication Engineering in 2000. He has held visiting researcher positions at the New Jersey Institute of Technology and the Solar Energy Research Institute of Singapore. Dr. Lenka’s accolades include the IEEE Kolkata Section Outstanding Volunteer Award (2021), the Distinguished Researcher in Nanoelectronics Award (2021), and the Distinguished Faculty Award from NIT Silchar (2019). He is a Certified Professional Engineer, a Fellow of IETE and IEI, and a Senior Member of IEEE. He has supervised 12 Ph.D. students and 23 M.Tech. theses.

Hieu Pham Trung Nguyen, an Associate Professor at the New Jersey Institute of Technology since 2014, received his Ph.D. in Electrical Engineering from McGill University in 2012. He directs the Nano-Optoelectronics Materials and Devices Laboratory, focusing on the growth and characterization of photonic and electronic devices. Dr. Nguyen has published more than 80 papers and serves as a reviewer for more than 80 journals. His awards include the NSF CAREER Award (2020), the Saul K. Fenster Innovation in Engineering Education Award (2019), and several other recognitions for his contributions to teaching and research in optics and photonics.