Atomic Layer Processing

Semiconductor Dry Etching Technology
1. Auflage 2021
ISBN: 978-3-527-34668-4
Verlag: WILEY-VCH

Buch, Englisch, 284 Seiten, Format (B × H): 178 mm x 252 mm, Gewicht: 567 g

Learn about fundamental and advanced topics in etching with this practical guide

Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching.

The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology.

Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from:

- A complete discussion of the fundamentals of how to remove atoms from various surfaces
- An examination of emerging etching technologies, including laser and electron beam assisted etching
- A treatment of process control in etching technology and the role played by artificial intelligence
- Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more

Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.

Autoren/Hrsg.

Lill, Thorsten

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
• Naturwissenschaften Chemie Physikalische Chemie Kolloidchemie

Inhaltsverzeichnis

1. INTRODUCTION
 
2. FUNDAMENTALS
2.1. Important performance metrics of etching processes
2.2. Physisorption and Chemisorption
2.3. Desorption
2.4. Surface Reactions
2.5. Sputtering
2.6. Implantation
2.7. Diffusion
2.8. Transport phenomena in 3D features
2.8.1. Neutral transport
2.8.2. Ion transport
2.8.3. Transport of reaction products
2.9. Classification of etching technologies
 
3. THERMAL ETCHING
3.1. Mechanism and performance metrics of Thermal Etching
3.2. Applications examples
 
4. THERMAL ISOTROPIC ALE
4.1. Mechanism of Thermal Isotropic ALE
4.1.1. Chelation / Condensation ALE
4.1.2. Ligand Exchange ALE
4.1.3. Conversion ALE
4.1.4. Oxidation / Fluorination ALE
4.2. Performance metrics of Thermal Isotropic ALE
4.3. Plasma-assisted Isotropic ALE
4.4. Applications examples
4.4.1. Area-selective deposition
4.4.2. Formation of lateral devices
 
5. RADICAL ETCHING
5.1. Mechanism of Radical Etching
5.2. Performance metrics
5.3. Applications examples
 
6. DIRECTIONAL ALE
6.1. Mechanism of Directional ALE
6.1.1. ALE with directional modification step
6.1.2. ALE with directional removal step and modification by chemisorption and diffusion
6.1.3. ALE with directional removal step and modification by reactive layer deposition
6.2. Performance metrics
6.3. Applications examples
 
7. REACTIVE ION ETCHING
7.1. Reactive Ion Etching Mechanisms
7.1.1. Simultaneous species fluxes
7.1.2. Chemical sputtering
7.1.3. Mixed layer formation
7.1.4. Role of etching products
7.2. Performance metrics
7.3. Application examples
7.3.1. Patterning
7.3.2. Logic Devices
7.3.3. DRAM and 3D NAND memory
7.3.4. Emerging memories
 
8. ION BEAM ETCHING
8.1. Mechanism and performance metrics of Ion Beam Etching
8.2. Applications examples
 
9. ETCHING SPECIES GENERATION
9.1. Introduction of low temperature plasmas
9.2. Capacitively coupled plasmas
9.3. Inductively coupled plasmas
9.4. Ion energy distribution modulation
9.5. Plasma-pulsing
9.6. Grid sources
 
10. EMERGING ETCHING TECHNOLOGIES
10.1. Electron assisted chemical etching
10.2. Photon assisted chemical etching

Über Autor(innen)

Thorsten Lill, PhD, is Vice President of Emerging Etch Technologies and Systems at Lam Research. He received his doctorate in Physics from the Albert Ludwigs University in Freiburg, Germany and researched as a post doc at the Argonne National Laboratory. He has published 88 articles in the field and holds 89 patents.