Semiconductor Power Devices

Volume 1: Physics, Technology and Design of Power Devices
Third Auflage 2026
ISBN: 978-3-032-15695-2
Verlag: Springer

Buch, Englisch, 565 Seiten, Format (B × H): 155 mm x 235 mm

This new edition of the book Semiconductor Power Devices is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of the physical principles essential for understanding modern power devices. The complementation of the classical pn-theory regarding high-injection behavior and the description of emitters by H. Schlangenotto is now rounded off, displayed in newly written Sections. For IGBTs, new structures with strong carrier confinement are added. New are special chapters on SiC devices and GaN devices. In the SiC chapter, the bipolar mode of the MOSFET body diode and its reverse recovery is discussed for the first time.

The edition provides extended content offering significant updates compared to previous editions.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Lutz, Josef

Schlangenotto, Heinrich

Scheuermann, Uwe

DeDoncker, Rik

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

1. Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems.- 2. Semiconductor Properties.- 3. pn-Junctions.- 4. Short Introduction to Power Device Technology.- 5. pin-Diodes.- 6. Schottky Diodes.- 7. Bipolar Transistors.- 8. Thyristors.- 9. MOS Transistors.- 10. IGBTs.- 11. Packaging and Reliability of Power Devices.- 12. Destructive Mechanisms in Power Devices.- 13. Power Device-Induced Oscillations and Electromagnetic Disturbances.- 14. Power Electronic System Integration.

Über Autor(innen)

Josef Lutz was Professor of Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany, and is now staff member. His research focuses on power semiconductor devices, packaging, and reliability. He is widely recognized for inventing the Controlled Axial Lifetime (CAL) diode, a breakthrough in diode technology.

Heinrich Schlangenotto is a physicist based in Gütersloh, Germany, specializing in the physics of semiconductor power devices and their dynamic behavior. He pioneered the fast, soft recovery SPEED-diode, improving the performance of rectifier diodes.

Uwe Scheuermann worked for more than 30 years at Semikron in Nuremberg, Germany, in power module design, packaging technologies, and reliability. He contributed to introduce innovative packaging concepts such as spring contacts, shaping modern power module architecture.

Rik De Doncker is Professor at RWTH Aachen University, Germany, heading the Institute for Power Electronics and Electrical Drives (ISEA) and the Institute for Power Generation and Storage Systems (PGS) at E.ON ERC. His research focusses on power electronics and high-power converters. Among others, he is known for proposing in 1988 the three-phase Dual Active Bridge, a soft-switching bi-directional galvanically isolated DC-DC converter, a milestone in high-power medium-voltage converter technology.