Semiconductor Power Devices

Volume 2: Packaging, Thermal aspects, Reliability and Ruggedness
Third Auflage 2026
ISBN: 978-3-032-23488-9
Verlag: Springer Nature Switzerland AG

Buch, Englisch, 361 Seiten, Format (B × H): 155 mm x 235 mm

This new edition of the book is now divided into two volumes. Volume 2 focuses on Packaging, Cooling, Reliability, and Advanced Design Aspects of Power Devices. Readers will find in-depth coverage of packaging technologies, including conventional and advanced concepts for Si, SiC, and GaN devices, thermal simulation methods, and parasitic electrical elements in power modules. The book explores cooling strategies from air to liquid and double-sided cooling, followed by comprehensive chapters on reliability testing, failure mechanisms, and lifetime prediction models. It also addresses destructive phenomena such as thermal breakdown, surge currents, overvoltage, and short-circuit behavior, along with cosmic ray failures and their mitigation. Additional chapters discuss electromagnetic disturbances, oscillations, and the integration of power electronic systems, making this volume an essential resource for engineers and researchers working on robust and efficient power device design.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Lutz, Josef

Schlangenotto, Heinrich

Scheuermann, Uwe

DeDoncker, Rik

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Chemische Verfahrenstechnik

Inhaltsverzeichnis

1. The Challenge of Packaging Technology.- 2. Package Types.- 3. Conventional Capsules.- 4. IGBT Presspacks.- 5. The TO-Family and Its Relatives.- 6. GaN Device Packages.- 7. Physical Properties of Materials.- 8. Thermal Simulation and Thermal Equivalent Circuits.

Über Autor(innen)

Josef Lutz was Professor of Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany, and is now staff member. His research focuses on power semiconductor devices, packaging, and reliability. He is widely recognized for inventing the Controlled Axial Lifetime (CAL) diode, a breakthrough in diode technology.

Heinrich Schlangenotto is a physicist based in Gütersloh, Germany, specializing in the physics of semiconductor power devices and their dynamic behavior. He pioneered the fast, soft recovery SPEED-diode, improving the performance of rectifier diodes.

Uwe Scheuermann worked for more than 30 years at Semikron in Nuremberg, Germany, in power module design, packaging technologies, and reliability. He contributed to introduce innovative packaging concepts such as spring contacts, shaping modern power module architecture.

Rik De Doncker is Professor at RWTH Aachen University, Germany, heading the Institute for Power Electronics and Electrical Drives (ISEA) and the Institute for Power Generation and Storage Systems (PGS) at E.ON ERC. His research focusses on power electronics and high-power converters. Among others, he is known for proposing in 1988 the three-phase Dual Active Bridge, a soft-switching bi-directional galvanically isolated DC-DC converter, a milestone in high-power medium-voltage converter technology.