Fundamentals of Modern VLSI Devices

3. Auflage 2021
ISBN: 978-1-108-48002-4
Verlag: Cambridge University Press

Buch, Englisch, 700 Seiten, Format (B × H): 179 mm x 252 mm, Gewicht: 1307 g

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Autoren/Hrsg.

Ning, Tak H.

Taur, Yuan

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren

Inhaltsverzeichnis

Prefaces; Physical constants and unit conversions; List of symbols; 1. Introduction; 2. Basic device physics; 3. p–n junctions and metal–silicon contacts; 4. MOS capacitors; 5. MOSFETs: long channel; 6. MOSFETs: short channel; 7. Silicon-on-insulator and double-gate MOSFETs; 8. CMOS performance factors; 9. Bipolar devices; 10. Bipolar device design; 11. Bipolar performance factors; 12. Memory devices; References; Index.

Über Autor(innen)

Ning, Tak H.
Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.

Taur, Yuan
Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow.