Buch, Englisch, 328 Seiten, Format (B × H): 162 mm x 244 mm, Gewicht: 599 g
Buch, Englisch, 328 Seiten, Format (B × H): 162 mm x 244 mm, Gewicht: 599 g
ISBN: 978-0-8247-2633-1
Verlag: CRC Press
Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon.
Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them.
In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in
Zielgruppe
Academic and Professional Practice & Development
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Physics of Silicon Nanodevices. Single Electron and Ballistic Tunneling Devices. Quantum Effect in Si Nanodevices. Logic Devices. Resonant Tunneling. SESO Memory Devices. PLES Devices. Memory Devices. Short Channel MOSFET. Architecture. FinFET.