Charge Pump Circuit Design

Erscheinungsjahr 2006
ISBN: 978-0-07-147045-2
Verlag: McGraw-Hill

Buch, Englisch, 247 Seiten, Format (B × H): 157 mm x 235 mm, Gewicht: 538 g

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Charge pumps are finding increased attention and diversified usage in the new era of nanometer-generation chips used in different systems. This book explains the different architectures and requirements for an efficient charge pump design and explains each step in detail. It's filled with extra hands-on design information, potential pitfalls to avoid, and practical ideas harnessed from the authors' extensive experience designing charge pumps.

Autoren/Hrsg.

Pan, Feng

Samaddar, Tapan

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik

Inhaltsverzeichnis

Chapter 1.History of High Voltage Charge Pump Chapter 2.Basic MOS Device PhysicsChapter 3.Basic Operation of a Charge PumpChapter 4.Charge Pump Design Criteria Chapter 5.How to Design a Basic Charge PumpChapter 6.Designing a Better Charge PumpChapter 7. Different Charge Pump ArchitecturesChapter 8. Future Design ReferencesChapter 9. A Practical Charge Pump Design Example and Analysis

Über Autor(innen)

Pan, Feng
McGraw-Hill authors represent the leading experts in their fields and are dedicated to improving the lives, careers, and interests of readers worldwide

Samaddar, Tapan
McGraw-Hill authors represent the leading experts in their fields and are dedicated to improving the lives, careers, and interests of readers worldwide

Tapan Samaddar is a design engineer at SanDisk Corporation, where he leads the company’s high-voltage circuit designs. Previously, he was employed by T-RAM, Inc., where he was involved in the design of high-speed SRAM-compatible memory chips. He is a holder of several U.S. design patents. Mr. Samaddar has also worked on high-density NOR Flash memory at Atmel Corporation, and on high-speed cache memory designs at ST Microelectronics. Feng Pan is doing circuit design at SanDisk Corporation, where he is involved in defining the architecture and implementing charge pumps and related high-voltage circuits over several generations of NAND Flash memory products. He is aholder of 17 U.S. design patents. Mr. Pan previously worked at AMD, where he contributed to the company's NOR Flash memory chip designs. He holds an MS degree from Stanford University and a BS degree from U.C. Berkeley.