Buch, Englisch, 364 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 1570 g
Reihe: NanoScience and Technology
Silicon-Germanium Heterostructure Devices: Basics and Realisations
Buch, Englisch, 364 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 1570 g
Reihe: NanoScience and Technology
ISBN: 978-3-540-22050-3
Verlag: Springer Berlin Heidelberg
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
- Technische Wissenschaften Technik Allgemein Nanotechnologie
- Technische Wissenschaften Sonstige Technologien | Angewandte Technik Angewandte Optik
- Naturwissenschaften Physik Quantenphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
Weitere Infos & Material
Material Science.- Resumé of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistors - HBTs.- Hetero Field Effect Transistors (HFETs).- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.
