X-Parameters

Erscheinungsjahr 2017
ISBN: 978-0-521-19323-8
Verlag: Cambridge University Press

Buch, Englisch, 233 Seiten, Format (B × H): 175 mm x 250 mm, Gewicht: 594 g

Reihe: The Cambridge RF and Microwave Engineering Series

This is the definitive guide to X-parameters, written by the original inventors and developers of this powerful new paradigm for nonlinear RF and microwave components and systems. Learn how to use X-parameters to overcome intricate problems in nonlinear RF and microwave engineering. The general theory behind X-parameters is carefully and intuitively introduced, and then simplified down to specific, practical cases, providing you with useful approximations that will greatly reduce the complexity of measuring, modeling and designing for nonlinear regimes of operation. Containing real-world case studies, definitions of standard symbols and notation, detailed derivations within the appendices, and exercises with solutions, this is the definitive stand-alone reference for researchers, engineers, scientists and students looking to remain on the cutting-edge of RF and microwave engineering.

Autoren/Hrsg.

Root, David E.

Verspecht, Jan

Horn, Jason

Marcu, Mihai

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik Funktechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik

Inhaltsverzeichnis

1. S-parameters; 2. X-parameters; 3. Small-signal sensitivities in the X-parameters; 4. X-parameter measurements; 5. Multi-tone multi-port X-parameters; 6. Memory.

Über Autor(innen)

Marcu, Mihai
Mihai Marcu is a Senior Consultant at Agilent Technologies, deeply involved in the development and application of X-parameters for non-linear modeling.

Horn, Jason
Jason Horn is an Expert Design Engineer at Agilent Technologies and has been heavily involved in the development of X-parameter measurements.

Verspecht, Jan
Jan Verspecht is a Master Research Engineer at Agilent Technologies. He invented X-parameters in 1996 and is a Fellow of the IEEE.

Root, David E.
David E. Root is an Agilent Research Fellow at Agilent Technologies. He co-led the Agilent research and technical development of X-parameters through its commercialization. He is a Fellow of the IEEE and co-editor of Nonlinear Transistor Model Parameter Extraction Techniques (2011).