Buch, Englisch, 252 Seiten, Format (B × H): 173 mm x 246 mm, Gewicht: 631 g
Buch, Englisch, 252 Seiten, Format (B × H): 173 mm x 246 mm, Gewicht: 631 g
Reihe: Computational Microelectronics
ISBN: 978-3-7091-0381-4
Verlag: Springer Vienna
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
1 Introduction
2 Scaling, Power Consumption, and Mobility Enhancement Techniques
3 Strain and Stress
4 Basic Properties of the Silicon Lattice
5 Band Structure of Relaxed Silicon
6 Perturbative Methods for Band Structure Calculations in Silicon
7 Strain Effects on the Silicon Crystal Structure
8 Strain Effects on the Silicon Band Structure
9 Strain Effects on the Conduction Band of Silicon
10 Electron Subbands in Silicon in the Effective Mass Approximation
11 Electron Subbands in Thin Silicon Films
12 Demands of Transport Modeling in Advanced MOSFETs
