Buch, Englisch, 736 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 1244 g
Buch, Englisch, 736 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 1244 g
ISBN: 978-0-19-982983-5
Verlag: Oxford University Press
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Autoren/Hrsg.
Weitere Infos & Material
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- 1.1 Introduction
- 1.2 Semiconductors
- 1.2.1 Intrinsic Semiconductors, Free Electrons, and Holes
- 1.2.2 Extrinsic Semiconductors
- 1.2.3 Equilibrium in the Absence of Electric Field
- 1.2.4 Equilibrium in the Presence of Electric Field
- 1.2.5 Semiconductors in Nonequilibrium; Quasi-Fermi Levels
- 1.2.6 Relations between Charge Density, Electric Field, and
- Potentials; Poisson's Equation
- 1.3 Conduction
- 1.3.1 Transit Time
- 1.3.2 Drift
- 1.3.3 Diffusion
- 1.3.4 Total Current
- 1.4 Contact Potentials
- 1.5 Thepn Junction
- 1.6 Overview of the MOS Transistors
- 1.6.1 Basic Structure
- 1.6.2 A Qualitative Description of MOS Transistor Operation
- 1.6.3 A Fluid Dynamical Analog
- 1.6.4 MOS Transistor Characteristics
- 1.7 Fabrication Processes and Device Features
- 1.8 A Brief Overview of This Book
- References
- Problems
-
- 2.1 Introduction
- 2.2 The Flat-Band Voltage
- 2.3 Potential Balance and Charge Balance
- 2.4 Effect of Gate - Body Voltage on Surface Condition
- 2.4.1 Flat -Band Condition
- 2.4.2 Accumulation
- 2.4.3 Depletion and Inversion
- 2.4.4 General Analysis
- 2.5 Accumulation and Depletion
- 2.6 Inversion
- 2.6.1 General Relations and Regions of Inversion
- 2.6.2 Strong Inversion
- 2.6.3 Weak Inversion
- 2.6.4 Moderate Inversion
- 2.7 Small - Signal Capacitance
- 2.8 Summary of Properties of the Regions of Inversion
- References
- Problems
-
- 3.1 Introduction
- 3.2 Contacting the Inversion Layer
- 3.3 The Body Effect
- 3.4 Regions of Inversion
- 3.4.1 Approximate Limits
- 3.4.2 Strong Inversion
- 3.4.3 Weak Inversion
- 3.5 A "CB Control" Point of View
- 3.5.1 Fundamentals
- 3.5.2 The "pinchoff voltage"
- References
- Problems
-
- 4.1 Introduction
- 4.2 Transistor Regions of Operation
- 4.3 Complete All - Region Model
- 4.3.1 Current Equations
- 4.4 Simplified All - Region Models
- 4.4.1 Linearizing the Depletion Region Charge
- 4.4.2 Body -Referenced Simplified All - Region Models
- 4.4.3 Source - Referenced Simplified All - Region Models
- 4.4.4 Charge Formulation of Simplified All-Region models
- 4.5 Models Based on Quasi - Fermi Potentials
- 4.6 Regions of Inversion in Terms of Terminal Voltages
- 4.7 Strong Inversion
- 4.7.1 Complete Strong -Inversion Model
- 4.7.2 Body - Referenced Simplified Strong Inversion Model
- 4.7.3 Source - Referenced Simplified Strong - Inversion Model
- 4.7.4 Model Origin Summary
- 4.8 Weak Inversion
- 4.8.1 Special Conditions in Weak Inversion
- 4.9 Moderate Inversion and Single - Piece Models
- 4.10 Source - Referenced vs. Body - Referenced Modeling
- 4.11 Effective Mobility
- 4.12 Effect of Extrinsic Source and Drain Series Resistances
- 4.13 Temperature Effects
- 4.14 Breakdown
- 4.15 The p-Channel MOS Transistor
- 4.16 Enhancement - Mode and Depletion - Mode Transistors
- 4.17 Model Parameter Values, Model Accuracy, and Model Comparison
- References
- Problems
-
- 5.1 Introduction
- 5.2 Carrier Velocity Saturation
- 5.3 Channel Length Modulation
- 5.4 Charge Sharing
- 5.4.1 Introduction
- 5.4.2 Short - Channel Devices
- 5.4.3 Narrow - Channel Devices
- 5.4.4 Limitations of Charge Sharing Models
- 5.5 Drain - Induced Barrier Lowering
- 5.6 Punchthrough
- 5.7 Combining Several Small - Dimension Effects Into One Model - A Strong Inversion Example
- 5.8 Hot Carrier Effects; Impact Ionization
- 5.9 Velocity Overshoot and Ballistic Opeation
- 5.10 Polysilicon Depletion
- 5.11 Quantum Mechanical Effects
- 5.12 DC Gate Current
- 5.13 Junction Leakage; Band - to - Band Tunneling; GIDL
- 5.14 Leakage Currents - Examples
- 5.15 The Quest for Ever - Smaller Devices
- 5.15.1 Introduction
- 5.15.2 Classical Scaling
- 5.15.3 Modern Scaling
- References
- Problems
-
- 6.1 Introduction
- 6.2 Quasi - Static Operation
- 6.3 Terminal Currents in Quasi - Static Operation
- 6.4 Evaluation of Intrinsic Chargers in Quasi - Static Operation
- 6.4.1 Introduction
- 6.4.2 Strong Inversion
- 6.4.3 Moderate Inversion
- 6.4.4 Weak Inversion
- 6.4.5 All - Region Model
- 6.4.6 Depletion and Accumulation
- 6.4.7 Plots of Chargers versus VGS
- 6.4.8 Use of Intrinsic Chargers in Evaluation the Terminal Currents
- 6.5 Transit Time Under DC Conditions
- 6.6 Limitations of the Quasi - Static Model
- 6.7 Non - Quasi - Static Modeling
- 6.7.1 Introduction
- 6.7.2 The Continuity Equation
- 6.7.3 Non - Quasi - Static Analysis
- 6.8 Extrinsic Parasitics
- 6.8.1 Extrinsic Capacitances
- 6.8.2 Extrinsic Resistance
- 6.8.3 Temperature Dependence
- 6.8.4 Simplified Models
- References
- Problems
-
- 7.1 Introduction
- 7.2 A Low - Frequency Small - Signal Model for the Intrinsic Part
- 7.2.1 Introduction
- 7.2.2 Small - Signal Model for the Drain - Source Current
- 7.2.3 Small - Signal Model for the Gate and Body Current
- 7.2.4 Complete Low - Frequency Small - Signal Model for the Intrinsic Part
- 7.2.5 Strong Inversion
- 7.2.6 Weak Inversion
- 7.2.7 Moderate Inversion
- 7.2.8 All - Region Models
- 7.3 A Medium - Frequency Small - Signal Model for the Intrinsic Part
- 7.3.1 Introduction
- 7.3.2 Intrinsic Capacitances
- 7.4 Including the Extrinsic Part
- 7.5 Noise
- 7.5.1 Introduction
- 7.5.2 White Noise
- 7.5.3 Flicker Noise
- 7.5.4 Noise in Extrinsic Resistances
- 7.5.5. Including Noise in Small - Signal Circuits
- 7.6 All - Region Models
- References
- Problems
-
- 8.1 Introduction
- 8.2 A Complete Quasi - Static Model
- 8.2.1 Complete Description of Intrinsic Capacitance Effects
- 8.2.2 Small - Signal Equivalent Circuit Topologies
- 8.2.3 Evaluation of Capacitances
- 8.2.4 Frequency Region of Validity
- 8.3 y- Parameter Models
- 8.4 Non - Quasi - Static Models
- 8.4.1 Introduction
- 8.4.2 A Non - Quasi - Static Strong - Inversion Model
- 8.4.3 Other Approximation and Higher - Oder Models
- 8.4.4 Model Comparison
- 8.5 High - Frequency Noise
- 8.6 Consideration In MOSFet Modeling for RF Applications
- References
- Problems
-
- 9.1 Introduction
- 9.2 Ion Implantation and Substrate Nonuniformity
- 9.3 Substrate Transverse Nonuniformity
- 9.3.1 Preliminaries
- 9.3.2 Threshold Voltage
- 9.3.3 Drain Current
- 9.3.4 Buried Channel Devices
- 9.4 Substrate Lateral Nonuniformity
- 9.5 Well Proximity Effect
- 9.6 Stress Effects
- 9.7 Statistical Variability
- References
- Problems
-
- 10.1 Introduction
- 10.2 Types of Models
- 10.2.1 Models for Device Analysis and Design
- 10.2.2 Device Models for Circuit Simulation
- 10.3 Attributes of Good Compact Models
- 10.4 Model Formulation
- 10.5 Model Implementation in Circuit Simulators
- 10.6 Model Testing
- 10.7 Parameter Extraction
- 10.8 Simulation and Extraction for RF Applications
- 10.9 Common MOSFET Models Available in Circuit Simulators
- 10.9.1 BSIM
- 10.9.2 EKV
- 10.9.3 HiSIM2
- 10.9.4 PSP
- References
- Problems
- Appendices
- A. Basic Laws of Electrostatic in One Dimension
- B. Quasi - Fermi Levels and Currents
- C. General Analysis of the Two - Terminal MOS Structure
- D. Careful Definitions for the Limits of Moderate Inversion
- E. General Analysis of the Three - Terminal MOS Structure
- F. Drain Current Formulation Using Quasi - Fermi Potentials
- G. Modeling Based on Pinchoff Voltage and Related Topics
- H. Evaluation of the Intrinsic Transient Source and Drain Current
- I. Quantities Use in the Derivation of the Non-Quasi -Static Y-Parameter Model
- K. Analysis of Buried Channel Devices
- L. MOSFET Model Benchmark Tests
