Characteristics Evaluation and Device Design

Erscheinungsjahr 2025
ISBN: 978-3-0364-0914-6
Verlag: Trans Tech Publications

Buch, Englisch, 100 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g

This special edition analyses recent technological advances, modern design methodologies, and performance evaluation and parameters optimisation techniques of SiC-based power devices.

Autoren/Hrsg.

Veliadis, Victor

Salemi, Arash

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik

Inhaltsverzeichnis

Preface
Design Parameters Impact on Electrical Characteristics of 4H-SiC Thyristors with Etched Junction Termination Extension
SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain
TCAD Modelling of Anisotropic Channel Mobility in 4H-SiC MOSFETs
On the Characterization of 4H-SiC PiN Diodes and JFETs for their Use in High-Voltage Bidirectional Power Devices
The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation
Optimizing 1.2 kV SiC Trench MOSFETs for Enhanced Performance and Manufacturing Efficiency
Novel SiC MOSFET Edge-Termination Structure for Electric Field Relaxation Using an Oxide Film along the Trench Surface
SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions
Three Level Pulses to Investigate Gate Switching Instability
DFT Calculations on the Termination of 4H-SiC Non-Polar Surfaces during Photoelectrochemical Pore Formation
TCAD Model Parameter Calibration Strategy for 1200V SiC MOSFET
Lifetime Modeling of MOS Based SiC Vertical Power Devices under High Voltage Blocking Stress