Characteristics of MOSFETs

Erscheinungsjahr 2025
ISBN: 978-3-0364-0913-9
Verlag: Trans Tech Publications

Buch, Englisch, 106 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g

As a valuable resource for researchers, engineers, and practitioners, this special edition presents a balanced account of the scientific foundations together with the engineering and technological solutions that underpin the advancement and deployment of SiC-based power devices.

Autoren/Hrsg.

Veliadis, Victor

Salemi, Arash

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren

Inhaltsverzeichnis

Preface
Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor
Investigation on Effect of Electrical Characteristics of Proton Implanted 4H-SiC MOSFET
Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
1200 V 4H-SiC VDMOSFET Having > 2.5x On-Current Improvement
Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs
Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts