- Neu
Buch, Englisch, 92 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 300 g
Buch, Englisch, 92 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 300 g
ISBN: 978-3-0364-0910-8
Verlag: Trans Tech Publications
This special edition is a helpful resource for researchers, engineers, and practitioners involved in developing, designing, and manufacturing next-generation power electronic components. The articles cover both fundamental principles and applied methodologies, offering a balanced perspective on modern semiconductor technology.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
Weitere Infos & Material
Preface
Filling-Design Effect of Powder Source in the Crucible on SiC Single-Crystal Growth
Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
Epitaxial SiC Development for High Nitrogen Incorporation
The 4H-SiC Epitaxy Study of Ammonia Doping
Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks
Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
Active Planarization Method from Rough Surface of 4º-off 4H-SiC (0001) Controlled by Step Bunching and Debunching Mechanism Using Dynamic AGE-ing®
The Application of Dynamical Thermal Annealing Processes after Mechanical Slicing as an Integrated Contactless SiC Wafering Method to Control Crystal Defects
Optimization of Heat Transfer Design for High Quality 4H-SiC Ingot Growth
High-Quality SiC Crystal Growth by Cooldown Rate Control at Cooling Stage
