Buch, Englisch, 104 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
Buch, Englisch, 104 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
ISBN: 978-3-0364-0911-5
Verlag: Trans Tech Publications
By combining perspective materials processing techniques, device engineering, and circuit integration methods, this special edition provides a comprehensive overview of the state of the art in SiC-based power electronics device fabrication technologies, serving as a valuable resource for researchers, engineers, and practitioners in the field.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Preface
Isolation Structure for Monolithic Integration of Planar CMOS and 1.7 kV Vertical Power MOSFET on 4H-SiC by High Energy Ion Implantation
Impact of Silicon Nitride Stress on Defects Generation in 4H-SiC and the Effect of Sacrificial Oxidation on Defects Reduction
Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-K Stacks on 4H-SiC
Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
Rapid Thermal Anneal with Conductive Heating for SiC Contact Formation
The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement
A Simplified Method for Extracting Contact Resistivity Using the Circular Transmission Line Model
BCl3 Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC
Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
Investigation of Interface and Reliability of 3C- and 4H-SiC MOS Structures through Gate Dielectric Stacking and Post-Deposition Annealing
Deep Implanted SiC Super-Junction Technology
Improved Angle Tolerance in 4H-SiC Trench Filling Epitaxy Using Chlorinated Chemistry
Study of SiC Trench Etching Characteristics for Different Crystal Planes
