Buch, Englisch, 104 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
Buch, Englisch, 104 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g
ISBN: 978-3-0364-0761-6
Verlag: Trans Tech Publications
This special edition aims to serve as a valuable resource for researchers and engineers engaged in developing and producing advanced semiconductor power devices. The publication provides readers with a balanced view of this field's scientific foundations and applied methodologies.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
Weitere Infos & Material
Preface
Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Process Gas Control for High-Resistance HPSI-SiC Growth
High-Temperature Adhesive Bonding of 4H-SiC Substrates
New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
SmartSiC™ 150 & 200mm Engineered Substrate: Enabling SiC Power Devices with Improved Performances and Reliability
Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces
Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
