Technological Improvements in Devices Fabrication

Erscheinungsjahr 2025
ISBN: 978-3-0364-0912-2
Verlag: Trans Tech Publications

Buch, Englisch, 106 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 320 g

This special edition provides a comprehensive overview of the latest process enhancements that underpin the continued advancement of SiC-based device technologies by addressing methods of compound semiconductor processing and technologies of electronics device structure forming with a focus on end-device reliability.

Autoren/Hrsg.

Veliadis, Victor

Salemi, Arash

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien

Inhaltsverzeichnis

Preface
Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes
Indium-Tin-Oxide (ITO) Interlayer-Assisted Ohmic Contacts on n-Type 4H-SiC with Low Specific Contact Resistance
Trench Etch Processing for SiC Superjunction Schottky Diodes
Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
Investigation of Poly-Si Gated, Al2O3-Based High-k Dielectrics on 4H-SiC
Effect of Inserting an Intervening Layer on Fb Reduction in TiN Schottky
SiC Plasma Dicing for Future High Yield Die Singulation