Wide Bandgap Semiconductors for Power Electronics

Materials, Devices, Applications
1. Auflage 2021
ISBN: 978-3-527-34671-4
Verlag: WILEY-VCH

Buch, Englisch, 736 Seiten, Format (B × H): 175 mm x 249 mm, Gewicht: 1746 g

Wide Bandgap Semiconductors for Power Electronic

A guide to the field of wide bandgap semiconductor technology

Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.

The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers.

This important book: - Presents a review of wide bandgap materials and recent developments
- Links the high potential of wide bandgap semiconductors with the technological implementation capabilities
- Offers a unique combination of academic and industrial perspectives
- Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner

Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Autoren/Hrsg.

Wellmann, Peter

Ohtani, Noboru

Rupp, Roland

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Introduction
 
PART I. SILICON CARBIDE (SiC)
Bulk Growth of hex-SiC
Industrial Perspectives on hex-SiC Bulk Growth
CVD Epitaxy of hex-SiC
Industrial Perspective on CVD Epitaxy of hex-SiC
Bulk and Epitaxial Growth of c-SiC
Intrinsic Defects in SiC
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy
Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC
MOS Gate Oxide Interface Defects in SiC
SiC-Graphene Interfaces
Device Processing Using c-SiC and hex-SiC
Unipolar SiC Devices
Bipolar SiC Devices
Reliability of SiC Devices
Industrial Systems Using SiC Circuits
Hybrid Electric Vehicles and Electric Vehicles Applications of SiC
Novel Applications of SiC in Quantum Information
 
PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3
Ammonothermal and HVPE Bulk Growth of GaN
GaN on Si
HPSG and CVD Growth of Diamond
Diamond Epitaxy and Device Processing
Epitaxial Growth of Beta-Ga2O3

Über Autor(innen)

Peter Wellmann is Professor at the University of Erlangen-Nuremberg, Germany, and Chair of the Department of Materials for Electronics and Energy Technology. After his PhD he was postdoctoral researcher at the Materials Department of the University of California Santa Barbara, USA. He did his habilitation in Erlangen in 2001 on the topic of vapor growth and characterization of silicon carbide. Peter Wellmann was Visiting Professor at the National Polytechnic Institute of Grenoble and at the University of Montpellier 2, France.
 
Noboru Ohtani is Professor at the School of Science and Technology and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan. He earned his PhD degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he worked at the Advanced Technology Research Laboratories of the Nippon Steel Corporation.
 
Roland Rupp is Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications. He obtained his Diploma from the University of Erlangen-Nuremberg, and subsequently worked as Research Engineer at Stettner&Co. He then returned to university to obtain his PhD and afterwards worked as Development Engineer at Siemens AG for seven years before taking on his current position.